[BOOK][B] Handbook of terahertz technologies: devices and applications

HJ Song, T Nagatsuma - 2015 - books.google.com
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been
investigated in a few limited fields, such as astronomy, because of a lack of devices for their …

Status and prospects of high-power heterostructure barrier varactor frequency multipliers

J Stake, A Malko, T Bryllert… - Proceedings of the IEEE, 2017 - ieeexplore.ieee.org
There is a high demand for compact, room-temperature sources operating at millimeter-
wave and terahertz (THz) frequencies for space instruments and terrestrial applications. This …

Electro-thermal model for multi-anode Schottky diode multipliers

AY Tang, E Schlecht, R Lin… - IEEE Transactions …, 2012 - ieeexplore.ieee.org
We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier
circuits. The thermal model is developed for an n-anode multiplier via a thermal resistance …

A 474 GHz HBV Frequency Quintupler Integrated on a 20 Thick Silicon Substrate

A Malko, T Bryllert, J Vukusic… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler
(× 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV …

Heterostructure-barrier-varactor design

J Stake, SH Jones, L Dillner, S Hollung… - IEEE Transactions on …, 2000 - ieeexplore.ieee.org
In this paper, we propose a simple set of accurate frequency-domain design equations for
calculation of optimum embedding impedances, optimum input power, bandwidth, and …

A 0.2-W heterostructure barrier varactor frequency tripler at 113 GHz

J Vukusic, T Bryllert, TA Emadi… - IEEE Electron Device …, 2007 - ieeexplore.ieee.org
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV)
frequency tripler. The HBV device topology was designed for efficient thermal dissipation …

[PDF][PDF] Steady-state and transient thermal analysis of high-power planar Schottky diodes

AY Tang, E Schlecht, G Chattopadhyay, R Lin… - … Symposium on Space …, 2011 - Citeseer
In this paper, we present the thermal analysis of high frequency planar Schottky diode based
multiplier chips, for high power applications. In order to optimize the thermal characteristic of …

Monolithic HBV-based 282-GHz tripler with 31-mW output power

J Vukusic, T Bryllert, Ø Olsen… - IEEE Electron Device …, 2012 - ieeexplore.ieee.org
We present a heterostructure barrier varactor multiplier at 282 GHz. The tripler chip was
monolithically fabricated in the InGaAs/InAlAs material system on InP as carrier substrate …

A 270-GHz tuner-less heterostructure barrier varactor frequency tripler

Q **ao, JL Hesler, TW Crowe… - IEEE microwave and …, 2007 - ieeexplore.ieee.org
A tuner-less heterostructure barrier varactor (HBV) frequency tripler has been designed,
fabricated, and tested. A conversion efficiency of 7.2% and output power of 6.5 mW were …

A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line

L **ang, Y Zhu, Q Ding, Y Luo, J Sun… - Applied Physics …, 2023 - iopscience.iop.org
We report a microwave nonlinear transmission line (NLTL) based on AlGaN/GaN Schottky-
barrier diodes. As a comb generator, the NLTL produces a frequency comb from 4 to 40 GHz …