Ohmic contacts to Gallium Nitride materials
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
Enhancement of light extraction from light emitting diodes
AI Zhmakin - Physics Reports, 2011 - Elsevier
The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …
semiconductor structure is the consequence of the large value of the refractive index. The …
High-bandwidth green semipolar (20–21) InGaN/GaN micro light-emitting diodes for visible light communication
The light-emitting diode (LED) is among promising candidates of light sources in visible light
communication (VLC); however, strong internal polarization fields in common c-plane LEDs …
communication (VLC); however, strong internal polarization fields in common c-plane LEDs …
Advances in AFM for the electrical characterization of semiconductors
RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …
principal application in the determination of surface topography. However, the use of the …
Ultrasensitive solution-processed broad-band photodetectors using CH 3 NH 3 PbI 3 perovskite hybrids and PbS quantum dots as light harvesters
Sensing from ultraviolet-visible to infrared is critical for both scientific and industrial
applications. In this work, we demonstrate solution-processed ultrasensitive broad-band …
applications. In this work, we demonstrate solution-processed ultrasensitive broad-band …
Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by
temperature dependent current–voltage measurements. At low temperature, the leakage …
temperature dependent current–voltage measurements. At low temperature, the leakage …
Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
MJ Uren, M Cäsar, MA Gajda, M Kuball - Applied Physics Letters, 2014 - pubs.aip.org
Temperature dependent pulsed and ramped substrate bias measurements are used to
develop a detailed understanding of the vertical carrier transport in the buffer layers in a …
develop a detailed understanding of the vertical carrier transport in the buffer layers in a …
Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing
Precise optical modeling of blue light-emitting diodes (LEDs) is constructed by reasonable
optical parameters and Monte Carlo ray-tracing with the capability of precisely predicting …
optical parameters and Monte Carlo ray-tracing with the capability of precisely predicting …
Increasing the reliability of solid state lighting systems via self-healing approaches: A review
Reliability issues in solid state lighting (SSL) devices based on light emitting diodes (LED) is
of major concern as it is a limiting factor to promote these optoelectronic devices for general …
of major concern as it is a limiting factor to promote these optoelectronic devices for general …
Performance Enhanced Light-Emitting Diodes Fabricated from Nanocrystalline CsPbBr3 with In Situ Zn2+ Addition
Inorganic cesium lead halide perovskite nanocrystals are promising materials for
optoelectronic applications as they exhibit high thermal stability alongside precise color …
optoelectronic applications as they exhibit high thermal stability alongside precise color …