With the development of GaN‐based optoelectronic devices, the need for p‐GaN contacts
with low resistivity, good thermal stability, and high transparency or reflectivity has become …

Formic acid (FA) has tremendous potential as a safe and convenient source of hydrogen for
renewable energy storage, but controlled and efficient dehydrogenation of FA by a robust …

High-power and reliable GaN-based vertical light-emitting diodes (V-LEDs) on 4-inch silicon
substrate were fabricated and characterized in this article. The metallization scheme …

The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO)
treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode (μ …

The implementation of reflective p-type Ohmic contact is an effective way to solve current
crowding and improve the optoelectronic performance of flip-chip light-emitting diodes …

There have been considerable efforts to use oxide/metal/oxide (OMO) multilayers as
transparent conductive electrodes (TCEs) for various optoelectronic devices. However, it …

In this study, a Ni/Ag/Ni/Au multilayer with first Ni layer of 0.5 nm was first optimized for high
reflectivity (92.3%), low specific contact resistance (2.1× 10− 3 Ω cm 2) and good attachment …

The thermal stability of Ag-based reflectors for GaN-based light-emitting diodes (LEDs) was
significantly improved by inserting an Mg layer. LEDs fabricated with the Mg-inserted …

The electrical properties of Ti/Al-based ohmic contacts to (0001) c-plane and (11–22)
semipolar n-type GaN were investigated as a function of annealing temperature. The …

The electrochemical deposition of zinc on single‐crystal n‐type GaN (0001) from a sulphate
solution has been investigated on the basis of electrochemical techniques including cyclic …