A fully integrated C-band GaN MMIC Doherty power amplifier with high efficiency and compact size for 5G application
This paper presents a fully integrated C-band Doherty power amplifier (DPA) based on a
0.25-μm GaN-HEMT process for the 5G massive MIMO application. The performance …
0.25-μm GaN-HEMT process for the 5G massive MIMO application. The performance …
A fully integrated wideband GaN Doherty power amplifier MMIC with high efficiency for 5G massive MIMO application
Y Guo, L Yang, J Liu, T Cao, C Yan… - IEICE Electronics …, 2023 - jstage.jst.go.jp
Abstract In this paper, a 4.5–5.5 GHz wideband high efficiency Doherty power amplifier
(DPA) MMIC using a novel compensation technique is proposed. The phase difference and …
(DPA) MMIC using a novel compensation technique is proposed. The phase difference and …
A 10.8-GHz GaN MMIC load-modulated amplifier
A Duh, M Duffy, W Hallberg, M Pinto… - 2019 49th European …, 2019 - ieeexplore.ieee.org
This work presents a 10.8-GHz load-modulated MMIC power amplifier designed in the 0.25
μm GaN-on-SiC Cree Wolfspeed process. The carrier amplifier has a single stage and is …
μm GaN-on-SiC Cree Wolfspeed process. The carrier amplifier has a single stage and is …
A Fully Integrated GaN Doherty Power Amplifier for WLAN 802.11 ax Application
In this paper, a fully integrated GaN Doherty power amplifier for WLAN 802.11 ax application
is presented. The output match network is realized by T-type three microline to decrease …
is presented. The output match network is realized by T-type three microline to decrease …
[PDF][PDF] Particle-Based Modeling of Reliability for Millimeter-Wave GaN Devices for Power Amplifier Applications
ADL Rey - 2018 - core.ac.uk
In this work, an advanced simulation study of reliability in millimeter-wave (mmwave) GaN
Devices for power amplifier (PA) applications is performed by means of a particle-based full …
Devices for power amplifier (PA) applications is performed by means of a particle-based full …