Ferroelectric negative capacitance
The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …
Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced
one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold …
one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold …
Optimization of negative-capacitance vertical-tunnel FET (NCVT-FET)
We investigate the GaAs 0.51 Sb 0.49/In 0.53 Ga 0.47 As negative-capacitance vertical-
tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling …
tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling …
Leveraging negative capacitance CNTFETs for image processing: An ultra-efficient ternary image edge detection hardware
Recently, integrating ferroelectric materials with nanotransistors such as carbon nanotube
field-effect transistors (CNTFETs) has opened new doors for demonstrating a new …
field-effect transistors (CNTFETs) has opened new doors for demonstrating a new …
Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
We report the fabrication process and performance characterization of a fully integrated
ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the …
ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the …
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance
G Gopal, H Garg, H Agrawal… - … Science and Technology, 2022 - iopscience.iop.org
The device behavior of a stacked ferroelectric heterojunction tunnel field effect transistor (Fe-
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
Growth and characterization of (glass, Ag)/SeO2 thin films
Herein, thin films of SeO 2 coated onto glass and Ag thin film substrates are studied and
characterized. The films which are prepared by a vacuum evaporation technique, displayed …
characterized. The films which are prepared by a vacuum evaporation technique, displayed …
Simulation-based analysis of ultra thin-body double gate ferroelectric TFET for an enhanced electric performance
The ultra thin body double gate FE layer TFET (UTB-DG-FE-TFET) is proposed and
investigated in this work. Electrical performance parameters such as surface potential ψ (x) …
investigated in this work. Electrical performance parameters such as surface potential ψ (x) …
Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study
This paper, numerically assesses the analog/RF performance of nanoscale negative
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …