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[HTML][HTML] Crystallized TiO2 Nanosurfaces in Biomedical Applications
Crystallization alters the characteristics of TiO2 nanosurfaces, which consequently
influences their bio-performance. In various biomedical applications, the anatase or rutile …
influences their bio-performance. In various biomedical applications, the anatase or rutile …
Metal-induced crystallization in metal oxides
L Lermusiaux, A Mazel… - Accounts of Chemical …, 2022 - ACS Publications
Conspectus The properties of a material depend upon its physical characteristics, one of
these being its crystalline state. Next generation solid-state technologies will integrate …
these being its crystalline state. Next generation solid-state technologies will integrate …
Enhanced visible-light-driven photocatalytic activity of Au@ Ag core–shell bimetallic nanoparticles immobilized on electrospun TiO 2 nanofibers for degradation of …
In this work, Au@ Ag core–shell nanoparticles (NPs) with variable Ag shell thickness were
synthesized and immobilized on TiO2 nanofibers (TNF). Further, the photocatalytic activity of …
synthesized and immobilized on TiO2 nanofibers (TNF). Further, the photocatalytic activity of …
Photodegradation of pharmaceutical drugs using Sn-modified TiO2 powders under visible light irradiation
Sn-modified TiO 2 powders with different amounts of tin (0, 2.4, 5.1 and 7.2 at.%) were
obtained by the surfactant-assisted technique using Pluronic P123 as template. The …
obtained by the surfactant-assisted technique using Pluronic P123 as template. The …
Enhanced crystallinity, optical conductivity and terahertz cutoff frequency of stacked layers of FeSe2 by Al nanosheets
AF Qasrawi, AJ Toubasi - Optik, 2023 - Elsevier
Herein a 250 nm thick two stacked layers of FeSe 2 (abbreviated as FF) thin films and FF
stacks comprising aluminum nanosheets of thicknesses of 50 nm (FAF) are studied …
stacks comprising aluminum nanosheets of thicknesses of 50 nm (FAF) are studied …
Radiation Response of HfOx-Based Resistive Random Access Memory (RRAM) Devices
A report on the fabrication and radiation response of HfO x thin film-based resistive random
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaOx-based MOS capacitors
RSP Goud, M Akkanaboina, S Machiboyina… - Nuclear Instruments and …, 2024 - Elsevier
In this work, we present a detailed study on the effects of energetic ions and gamma
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …
Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
Microwave-assisted and metal-induced crystallization: a rapid and low temperature combination
PMP Danty, A Mazel, B Cormary, ML De Marco… - Inorganic …, 2020 - ACS Publications
Here, we present a new crystallization process which, by combining microwaves and metal-
induced devitrification, reduces both the time and the temperature of crystallization …
induced devitrification, reduces both the time and the temperature of crystallization …
Radiation tolerance and defect dynamics of ALD-grown HfTiOx-based MOS capacitors
R Sai Prasad Goud, M Akkanaboina… - Radiation Effects and …, 2023 - Taylor & Francis
The study of radiation response and reliability of high-k dielectric materials plays a
prominent role in Complementary Metal Oxide Semiconductor (CMOS) technology for …
prominent role in Complementary Metal Oxide Semiconductor (CMOS) technology for …