Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
[HTML][HTML] A review on the GaN-on-Si power electronic devices
Y Zhong, J Zhang, S Wu, L Jia, X Yang, Y Liu… - Fundamental …, 2022 - Elsevier
The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …
electronic devices grown on Si substrate. This article provides a concise introduction …
Gallium nitride-based complementary logic integrated circuits
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
Building blocks for GaN power integration
GaN technology is on the advance for the use in power ICs thanks to space-saving
integrated circuit components and the increasing number of integrated devices. This work …
integrated circuit components and the increasing number of integrated devices. This work …
Monolithically integrated gan gate drivers–a design guide
In recent years, an increasing trend towards GaN integration can be observed, enabled by
the lateral structure of the GaN technology. A key improvement over a discrete …
the lateral structure of the GaN technology. A key improvement over a discrete …
Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
Z Jiang, M Hua, X Huang, L Li, C Wang… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this article, the impacts of the off-state gate bias (V GS, OFF) on dynamic on-resistance (R
ON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron …
ON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron …
Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture
C Le Royer, B Mohamad, J Biscarrat… - 2022 IEEE 34th …, 2022 - ieeexplore.ieee.org
In this paper we present a detailed performance status of AlGaN/GaN MOS channel High
Electron Mobility Transistors (MOSc HEMTs) with fully recessed gate architecture on 200mm …
Electron Mobility Transistors (MOSc HEMTs) with fully recessed gate architecture on 200mm …
Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs
GaN-channel field-effect transistors (-FETs) are essential components for implementing the
energy-efficient complementary logic circuitry for monolithic GaN power integration. This …
energy-efficient complementary logic circuitry for monolithic GaN power integration. This …
GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
650-V E-mode p-GaN gate HEMT with Schottky source extension towards enhanced short-circuit reliability
J Yu, J Wei, M Wang, J Yang, Y Wu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
A 650-V p-GaN gate HEMT with Schottky source extension is proposed towards enhanced
short-circuit (SC) reliability. At higher drain bias, a pinch-off point is formed at the edge of the …
short-circuit (SC) reliability. At higher drain bias, a pinch-off point is formed at the edge of the …