Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …

In this work, two dimensional (2D) MoS 2 nanosheets were functionalized on Ti 3 C 2 T x
MXene nanosheets via a surface modification strategy, leading to significant enhancement …

Presented are experimental results on the effect of concentration, aging, and annealing time
on the optical and structural properties of sol gel zinc oxide (ZnO) and Al-doped ZnO thin …

The investigation reports on the transparent and conducting pure and metal doped zinc
oxide (ZnO) thin layer. The layers are ultrasonic sprayed onto microscope glass substrates …

GaN and related nitride semiconductors have attracted considerable interest for use in solid-
state light and high-power/-frequency devices. Fabrication of high-quality metal/GaN …

This paper reviews the microstructural and electrical properties of Au/n-GaN
metal/semiconductor (MS) diode with an e-beam evaporated SrTiO 3 (STO) as an insulating …

The investigation reports on fabrication and measurements of heterojunction diode based
on ZnO layer. The layers are ultrasonic sprayed onto p-type silicon substrates at 350​° C …

Indium nitride (InN)-based nanostructures have attracted substantial interest in the
development of next-generation nanostructured optoelectronic devices. By expanding the …

This paper demonstrates the electrical and current transport properties of prepared Ti/α-
amylase/p-InP metal/polymer/semiconductor (MPS) junction by current–voltage (I–V) …

Diamond Schottky barrier diodes (SBDs) could theoretically operate at high voltage, high
temperature, and high frequency and be potentially used in power electronics. However, the …