Spin logic devices via electric field controlled magnetization reversal by spin-orbit torque

M Yang, Y Deng, Z Wu, K Cai… - IEEE Electron …, 2019 - ieeexplore.ieee.org
We describe a spin logic device with controllable magnetization switching of perpendicularly
magnetized ferromagnet/heavy metal structures on a ferroelectric (1-)[Pb (Mg 1/3 Nb 2/3) O …

A variation-aware timing modeling approach for write operation in hybrid CMOS/STT-MTJ circuits

R De Rose, M Lanuzza, F Crupi… - … on Circuits and …, 2017 - ieeexplore.ieee.org
In this paper, a variation-aware simulation framework for hybrid circuits comprising MOS
transistors and magnetic tunnel junction (MTJ) devices is presented. The framework is …

An 88-fJ/40-MHz [0.4 V]–0.61-pJ/1-GHz [0.9 V] Dual-Mode Logic 8 8 bit Multiplier Accumulator With a Self-Adjustment Mechanism in 28-nm FD-SOI

R Taco, I Levi, M Lanuzza, A Fish - IEEE Journal of Solid-State …, 2018 - ieeexplore.ieee.org
The unique ability of dual-mode logic (DML) to self-adapt to computational needs by
providing high speed and/or low energy consumption is demonstrated for the first time by …

Variability-aware analysis of hybrid MTJ/CMOS circuits by a micromagnetic-based simulation framework

R De Rose, M Lanuzza, F Crupi… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
Magnetic tunnel junctions (MTJs) are attracting an increasing interest due to their potentiality
for high-density nonvolatile memories. However, some issues need to be opportunely …

Back-biasing to performance and reliability evaluation of UTBB FDSOI, bulk FinFETs, and SOI FinFETs

WT Chang, CT Shih, JL Wu, SW Lin… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
FinFETs and ultrathin body and buried oxide fully depleted silicon on insulator (UTBB-
FDSOI) are the main transistors currently used in advanced integrated circuits (ICs). The …

Assessment of a universal logic gate and a full adder circuit based on cmos-memristor technology

S Guitarra, R Taco, M Gavilánez, J Yépez… - Solid-State …, 2023 - Elsevier
The study of memristor-based digital logic circuits is a new approach in non-conventional
computation frameworks because of the memristor's properties, especially the ability to store …

Gate-diffusion input (GDI) method for designing energy-efficient circuits in analogue voltage-mode fuzzy and QCA systems

E Abiri, A Darabi, A Sadeghi - Microelectronics Journal, 2019 - Elsevier
In this work, CNTFET-based GDI (CNT-GDI) and QCA-based GDI (QCA-GDI) methods
(CNT/QCA-GDI) for designing unique ultra-efficient analogue and logical blocks in voltage …

An SOI photodetector with field-induced embedded diode showing high responsivity and tunable response spectrum by backgate

XY Cao, WS Lin, HB Liu, JN Deng… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, we demonstrate experimentally a photodetector based on silicon-on-insulator
substrate. The photosensing diode is formed in the substrate induced by the backgate bias …

A gm/ID Methodology Based Data-Driven Search Algorithm for the Design of Multistage Multipath Feed-Forward-Compensated Amplifiers Targeting High Speed …

FT Gebreyohannes, J Porte, MM Louërat… - … on Computer-Aided …, 2020 - ieeexplore.ieee.org
This article presents a methodology for sizing transistors of a multistage, multipath capacitor-
less feed-forward compensated operational amplifiers employed in advanced CMOS …

Simulation study of trap-induced noise characteristics in FDSOI MOSFETs

J Xu, M Fan, Z Sun, F Liu, X Liu - Japanese Journal of Applied …, 2024 - iopscience.iop.org
The trap-induced noise characteristics of fully-depleted SOI (FDSOI) MOSFETs with ultra-
thin body and buried oxide are essential for high-performance applications. However …