[HTML][HTML] GaN power converter and high-side IC substrate issues on Si, pn junction, or SOI
The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …
complete power converter topologies such as half-bridges, multi-phase and multi-level …
Thermal analysis of Flip-Chip bonding designs for GaN power HEMTs with an on-Chip heat-spreading layer
In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for
high power GaN HEMT developed for power electronics applications, such as power …
high power GaN HEMT developed for power electronics applications, such as power …
Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors
This paper presents a novel approach to the efficient extraction of parasitic resistances in
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …
high electron mobility transistors (HEMTs). The study reveals that the gate resistance value …
Impact of Charge-Trap** Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions
In this study, we present a detailed analysis of trap** characteristics at the AlxGa1−
xN/GaN interface of AlxGa1− xN/GaN high-electron-mobility transistors (HEMTs) with …
xN/GaN interface of AlxGa1− xN/GaN high-electron-mobility transistors (HEMTs) with …
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression
In this study, we introduced a closed-form empirical expression for estimating the channel
temperature in AlGaN/GaN HEMTs. This model incorporates parameters such as substrate …
temperature in AlGaN/GaN HEMTs. This model incorporates parameters such as substrate …
An Extended Temperature Model Based on the Trap** Effect for Drain‐Source Current in GaN HEMTs
W Wu, R Yao, Y Liu, K Geng, Y Zhu - physica status solidi (a), 2024 - Wiley Online Library
In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high
electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect …
electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect …
Sheaf Attention–Based Osprey Spiking Neural Network for Effective Thermal Management and Self‐Heating Mitigation in GaAs and GaN HEMTs
This research introduces the sheaf attention–based osprey spiking neural network (SA‐
OSNN) to optimize the thermal performance of GaAs and GaN high electron mobility …
OSNN) to optimize the thermal performance of GaAs and GaN high electron mobility …
Thermal Resistance Modeling and its Different Aspects on AlGaN/GaN HEMTs: A Comprehensive Review
Thermal heat management profoundly affects AlGaN/GaN high-electron-mobility transistors
(HEMTs) overall performance and reliability. Understanding and improving the thermal …
(HEMTs) overall performance and reliability. Understanding and improving the thermal …
Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application
The mean‐time‐to‐failure (MTTF) of AlGaN/GaN high electron mobility transistor is
demonstrated by considering both voltage and temperature dependent electrical …
demonstrated by considering both voltage and temperature dependent electrical …