Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer
This paper demonstrates the role of high-k La 2 O 3 on the electrical performance of the Au/n-
GaN Schottky junction (SJ) as an insulating layer between the Au and n-GaN films. First, the …
GaN Schottky junction (SJ) as an insulating layer between the Au and n-GaN films. First, the …
Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material
The silicon carbide (SiC) crystal growth is a multiple‐phase aggregation process of Si and C
atoms. With the development of the clean energy industry, the 4H‐SiC has gained …
atoms. With the development of the clean energy industry, the 4H‐SiC has gained …
Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements
NC Saha, M Kasu - Diamond and Related Materials, 2019 - Elsevier
The interface properties of Al 2 O 3/hydrogen-terminated diamond (H-diamond) metal-oxide-
semiconductor (MOS) structures both with and without NO 2 p-type do** were studied by …
semiconductor (MOS) structures both with and without NO 2 p-type do** were studied by …
Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
S Waiprasoet, S Ittisanronnachai… - ACS Applied …, 2024 - ACS Publications
Copper (I) thiocyanate (CuSCN) is a unique coordination polymer semiconductor with
excellent hole-transport properties and a wide band gap. CuSCN enables the construction …
excellent hole-transport properties and a wide band gap. CuSCN enables the construction …
Interfacial modification mechanism of ALD-SiO2/4H-SiC heterojunction by synergistic nitrogen–oxygen-atmosphere RTA
F Huang, L Zheng, X Cheng, L Yan, J Huang, Z Liu - Applied Physics A, 2022 - Springer
In this work, the interfacial modification of the ALD-SiO2/4H-SiC heterojunction with
synergistic nitrogen–oxygen-atmosphere (N2/O2) rapid thermal annealing (RTA) and its …
synergistic nitrogen–oxygen-atmosphere (N2/O2) rapid thermal annealing (RTA) and its …
Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy
Q Wang, X Cheng, L Zheng, L Shen, D Zhang… - Applied Surface …, 2018 - Elsevier
The influence of lanthanum silicate (LaSiO x) passivation interlayer on the band alignment
between plasma enhanced atomic layer deposition (PEALD)-Al 2 O 3 films and 4H-SiC was …
between plasma enhanced atomic layer deposition (PEALD)-Al 2 O 3 films and 4H-SiC was …
Enhanced quality of Al2O3/SiC gate stack via microwave plasma annealing
NN You, XY Liu, Q Zhang, Z Wang, JY Wang, Y Xu… - Rare Metals, 2024 - Springer
The high-quality gate dielectric on silicon carbide (SiC) surface is critical to fabricate high-
performance SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). This …
performance SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). This …
Inhibition of Surface Corrosion Behavior of Zinc-Iron Alloy by Silicate Passivation
F Cao, P Cao, Y Li, Y Wang, L Shi, D Wu - Coatings, 2023 - mdpi.com
The passivation of zinc alloy coating was achieved through the utilization of both silicate and
trivalent chromium passivation systems, employing a specific process formula consisting of …
trivalent chromium passivation systems, employing a specific process formula consisting of …
Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask
J Li, X Cheng, Q Wang, L Zheng, L Shen, X Li… - Materials Science in …, 2017 - Elsevier
In this work, we performed an inductively coupled plasma (ICP) etching of SiC substrates
using different masks including SiO 2, Ni, Ni/SiO 2 and Ni/Al 2 O 3, and the properties of …
using different masks including SiO 2, Ni, Ni/SiO 2 and Ni/Al 2 O 3, and the properties of …
Enhanced electrical properties of 4H-SiC/Al2O3 heterojunction by PEALD in situ NH3-plasma passivation
L Zheng, J Huang, F Huang, Z Liu, X Cheng, Y Yu - Applied Physics A, 2022 - Springer
The carbon clusters and oxygen vacancies-induced interface traps and near-interface-oxide
traps (NIOTs) at the dielectric oxide/SiC heterojunction severely degenerate the electrical …
traps (NIOTs) at the dielectric oxide/SiC heterojunction severely degenerate the electrical …