The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …

Development of unconventional computing architectures, including neuromorphic
computing, relies heavily on novel devices with properly engineered properties. This …

The wake-up behavior and ON/OFF current ratio of TiN–Al2O3–Hf0. 5Zr0. 5O2–W
ferroelectric tunnel junction (FTJ) devices were investigated for different wake-up voltage …

Two-terminal ferroelectric synaptic weights are fabricated on silicon. The active layers
consist of a 2 nm thick WO x film and a 2.7 nm thick HfZrO 4 (HZO) film grown by atomic layer …

Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization
reversal and oxygen vacancy migration | Rare Metals Skip to main content Springer Nature …

A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-
Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO 4 …

To break the von Neumann bottleneck, emerging non-volatile memories have gained
extensive attention in hardware implementing neuromorphic computing. The device scaling …

This prospective and performance summary provides a view on the state of the art of
emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim …

Oxide-based memristors have gained significant attention due to their versatile
characteristics, making them highly suitable for bio-inspired computing. These …

An artificial synaptic element consisting of a three terminal Ferroelectric Field-Effect
Transistor (FeFET) with an oxide channel is presented in this thesis. Bio-inspired computing …