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Structure and optical properties of nanocrystalline hafnium oxide thin films
Hafnium oxide (HfO 2) films were grown by sputter-deposition by varying deposition
temperature (T s) in a wide range of 25–700° C. The deposited HfO 2 films were …
temperature (T s) in a wide range of 25–700° C. The deposited HfO 2 films were …
Novel synthesis of hafnium oxide nanoparticles by precipitation method and its characterization
Hafnium oxide nanoparticles (HfO2 NPs) have been successfully synthesized by means of a
novel precipitation method and were characterized by using X-ray diffraction (XRD), X-ray …
novel precipitation method and were characterized by using X-ray diffraction (XRD), X-ray …
Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers
for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150° C …
for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150° C …
Influence of oxygen partial pressure on microstructure, optical properties, residual stress and laser induced damage threshold of amorphous HfO2 thin films
HfO 2 thin films were deposited by electron beam evaporation technique at different oxygen
(O 2) partial pressures. The films are characterized using x-ray diffraction, x-ray reflectivity …
(O 2) partial pressures. The films are characterized using x-ray diffraction, x-ray reflectivity …
High temperature annealing effects on spectral, microstructural and laser damage resistance properties of sputtered HfO2 and HfO2-SiO2 mixture-based UV mirrors
Hafnium oxide is widely used as high refractive index material for making high power laser
coatings for UV spectral range. Thermal annealing is one of the most efficient post …
coatings for UV spectral range. Thermal annealing is one of the most efficient post …
Influence of high energy ion irradiation on structural, morphological and optical properties of high-k dielectric hafnium oxide (HfO2) thin films grown by atomic layer …
Modifications and resulting changes in various properties of nanocrystalline HfO 2 high-k
dielectric thin films with nominal thickness of 20 nm grown by atomic layer deposition …
dielectric thin films with nominal thickness of 20 nm grown by atomic layer deposition …
Synthesis and characterization of HfO2 nanoparticles by sonochemical approach
Hafnium oxide (HfO2) nanoparticles (NPs) have been prepared by a simple sonochemical
method at room temperature. The as prepared NPs were characterized with X-ray diffraction …
method at room temperature. The as prepared NPs were characterized with X-ray diffraction …
Effects of O2 flux on structure, optical properties and hydrophobicity of highly emissive antireflective HfO2 thin films by magnetron sputtering
We used magnetron sputtering to prepare high emissive HfO 2 thin films with thickness 300–
500 nm under different O 2 flux. A dense uniform HfO 2 thin film with a polycrystalline …
500 nm under different O 2 flux. A dense uniform HfO 2 thin film with a polycrystalline …
Influence of hydrogen annealing on the optoelectronic properties of WO3 thin films
The optoelectronic properties of WO 3 thin films were investigated after hydrogen treatment.
Thin films were deposited on heated substrates by the thermal evaporation and were …
Thin films were deposited on heated substrates by the thermal evaporation and were …
Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor
Amorphous indium–gallium–zinc oxide (IGZO)‐based optical synaptic transistor using
visible light as the signal that shows a clear difference between long‐term memory (LTM) …
visible light as the signal that shows a clear difference between long‐term memory (LTM) …