With the rapid development of emerging technologies such as artificial intelligence and high-
frequency communications, advanced subnanometer chips with a high-performance …

The interface between the metal and dielectric is an indispensable part in various electronic
devices. The migration of metallic species into the dielectric can adversely affect the …

Prolonging the lifetime of Cu as a level 1 and level 2 interconnect metal in future
nanoelectronic devices is a significant challenge as device dimensions continue to shrink …

Molecular and atomic permeability, thermal stability and interfacial reactions of ultrathin Ta,
TaN and Ta/TaN stack as barrier to Cu/low-k interconnects have been studied. It is shown …

Abstract Development of emerging technologies such as artificial intelligence, big data, and
smart vehicles brings increasing demands on high-performance integrated circuits (ICs). To …

The stability and control of copper (Cu) electrode application in oxide semiconductor indium
gallium zinc oxide (IGZO) can improve the resistance–capacitance (RC) delay, which is …

The miniaturization of electronic devices brings severe challenges in the deposition of metal
interconnects in back end of line processing due to a continually decreasing volume …

Manufacturable processes to reduce both channel and external resistances (R Ext) in CMOS
devices are described. Simulations show that R Ext will become equivalent to strained Si …

Metal diffusion in nanoscale materials is of great interest, yet the detailed kinetic behavior of
such diffusion remains elusive. We observe direction-controlled Cu diffusion during …

Copper (Cu) has been widely used as interconnect materials in semiconductor industry, due
to its advantages of high electrical, thermal conductivities, good electro-migration resistance …