Review of thin film transistor gas sensors: Comparison with resistive and capacitive sensors
The present review concerns thin film field effect transistor (TFT)-based gas sensors with
special emphasis on material synthesis, electrical characterizations and sensing properties …
special emphasis on material synthesis, electrical characterizations and sensing properties …
Influence of noble metals on the electronic and optical properties of the monoclinic ZrO2: a first-principles study
Y Pan, J Zhang - Vacuum, 2021 - Elsevier
The improvement of electronic and optical properties of the Zirconium dioxide (ZrO 2) is very
significance for the industrial applications. Here, we apply the first-principles calculations to …
significance for the industrial applications. Here, we apply the first-principles calculations to …
Spectroscopic analysis of defect-induced luminescent and dielectric properties of MgO-based composites on varying dopant concentration
R Kumar, R Kumar, R Kumar - Journal of Alloys and Compounds, 2024 - Elsevier
In this novel study, we prepared MgO matrix composites reinforced with varying weight
percent ZnO using a solid-state reaction (SSR) method at 500° C. We aimedto explore the …
percent ZnO using a solid-state reaction (SSR) method at 500° C. We aimedto explore the …
Study of ZnO/BST interface for thin-film transistor (TFT) applications
This work presents an investigation of ZnO/BST interface for the potential use of (Ba, Sr) TiO
3 as a gate–dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation. A …
3 as a gate–dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation. A …
Synthesis of Oxygen and Nitrogen Containing Heterocycles using Zirconium Dioxide/Mixed Oxide Nanoparticles as Reusable Green Catalysts: A Comprehensive …
PV Ledade, TL Lambat, JK Gunjate… - Current Organic …, 2023 - ingentaconnect.com
The remarkable improvements in organic synthesis facilitated by zirconium dioxide-based
nanoparticles are updated and summarized in this review. The ZrO2 acts as a versatile …
nanoparticles are updated and summarized in this review. The ZrO2 acts as a versatile …
[HTML][HTML] Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors
S Muthusamy, S Bharatan, S Sivaprakasam… - Materials, 2024 - mdpi.com
ZnO thin films were deposited using RF sputtering by varying the argon: oxygen gas flow
rates and substrate temperatures. Structural, optical and electrical characterization of ZnO …
rates and substrate temperatures. Structural, optical and electrical characterization of ZnO …
Improving the electrical properties of transparent ZnO-based thin-film transistors using MgO gate dielectric with various oxygen concentrations
JD Hwang, ZR Hsu - Nanotechnology, 2023 - iopscience.iop.org
Zinc oxide (ZnO)-based thin-film transistors (TFTs) have attracted increasing attention
towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to …
towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to …
Impact of interface trap distribution on the performance of LTPS TFT
This article presents a multiple trap** and release model (MTR) based technology
computer-aided design (TCAD) investigation of low-temperature poly-silicon (LTPS) thin film …
computer-aided design (TCAD) investigation of low-temperature poly-silicon (LTPS) thin film …
Effect of Ni Do** on the Structural and Optical Properties of ZrO2 Thin Films
Transparent thin films of pure and nickel-doped ZrO 2 with do** levels of 0, 1, 3 and 5
molar percentage were deposited through sol–gel dip coating and subsequently annealed …
molar percentage were deposited through sol–gel dip coating and subsequently annealed …
Design and analysis of IGZO based junctionless thin film transistor using SOI technology
In this paper, IGZO based Junctionless Thin Film Transistor (IGZO JLTFT) using SOI
technology is proposed with a channel length of 20 nm. The article also demonstrates a …
technology is proposed with a channel length of 20 nm. The article also demonstrates a …