Memristors, promising nanoelectronic devices with in-memory resistive switching behavior
that is assembled with a physically integrated core processing unit (CPU) and memory unit …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Aluminum scandium nitride (Al1–x Sc x N), with its large remanent polarization, is an
attractive material for high-density ferroelectric random-access memories. However, the …

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …

Analog switching in ferroelectric devices promises neuromorphic computing with the highest
energy efficiency if limited device scalability can be overcome. To contribute to a solution …

III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

The escalating demand for artificial intelligence (AI), the internet of things (IoTs), and energy-
efficient high-volume data processing has brought the need for innovative solutions to the …

Costly data movement in terms of time and energy in traditional von Neumann systems is
exacerbated by emerging information technologies related to artificial intelligence. In …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

Abstract Aluminum Scandium Nitride (Al1− xScxN) has received attention for its exceptional
ferroelectric properties, whereas the fundamental mechanism determining its dynamic …