Gallium oxide nanostructures: A review of synthesis, properties and applications
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
Effects of sputtering pressure and oxygen partial pressure on amorphous Ga2O3 film-based solar-blind ultraviolet photodetectors
The coupling of Ga 2 O 3 film with Si substrate is in favor of the development of high
integration of Ga 2 O 3-based UV photodetector. However, it is difficult in growing the high …
integration of Ga 2 O 3-based UV photodetector. However, it is difficult in growing the high …
A review on gallium oxide materials from solution processes
Gallium oxide (Ga2O3) materials can be fabricated via various methods or processes. It is
often mentioned that it possesses different polymorphs (α-, β-, γ-, δ-and ε-Ga2O3) and …
often mentioned that it possesses different polymorphs (α-, β-, γ-, δ-and ε-Ga2O3) and …
Synthesis of wide bandgap Ga2O3 (Eg ∼ 4.6–4.7 eV) thin films on sapphire by low pressure chemical vapor deposition
S Rafique, L Han, H Zhao - physica status solidi (a), 2016 - Wiley Online Library
This paper presents the synthesis of wide bandgap Ga2O3 thin films on differently oriented
sapphire substrates by using low pressure chemical vapor deposition (LPCVD) technique …
sapphire substrates by using low pressure chemical vapor deposition (LPCVD) technique …
Electrochemistry of layered GaSe and GeS: applications to ORR, OER and HER
Though many studies examined the properties of the class of IIIA–VIA and IVA–VIA layered
materials, few have delved into the electrochemical aspect of such materials. In light of the …
materials, few have delved into the electrochemical aspect of such materials. In light of the …
Self-assembled metastable γ-Ga2O3 nanoflowers with hexagonal nanopetals for solar-blind photodetection.
Y Teng, A Ponchel, ZK Yang, J **a - … Materials (Deerfield Beach …, 2014 - europepmc.org
Metastable γ-Ga2O3 nanoflowers assembled from hexagonal nanopetals are successfully
constructed by the oxidation of metallic Ga in acetone solution. The nanoflowers with a …
constructed by the oxidation of metallic Ga in acetone solution. The nanoflowers with a …
Memristor-CNTFET based ternary logic gates
Multilevel electronic systems offer the reduction of implementation'complexity, power
consumption, and area. Ternary system is a very promising system where more information …
consumption, and area. Ternary system is a very promising system where more information …
Solar blind photodetectors enabled by nanotextured β-Ga2O3 films grown via oxidation of GaAs substrates
A simple and inexpensive method for growing Ga 2 O 3 using GaAs wafers is demonstrated.
Si-doped GaAs wafers are heated to 1050° C in a horizontal tube furnace in both argon and …
Si-doped GaAs wafers are heated to 1050° C in a horizontal tube furnace in both argon and …
[HTML][HTML] Effects of post-deposition annealing temperatures in argon ambient on structural, optical, and electrical characteristics of RF magnetron sputtered gallium …
Different post-deposition annealing temperatures were carried out in argon ambient to
investigate the corresponding effects onto structural, morphological, optical, and electrical …
investigate the corresponding effects onto structural, morphological, optical, and electrical …
Effects of post-deposition annealing temperature in nitrogen/oxygen/nitrogen ambient on polycrystalline gallium oxide films
Polycrystalline Ga 2 O 3 films were obtained after post-deposition annealing of as-deposited
Ga 2 O 3 films via radio frequency magnetron sputtering at different temperatures (400, 600 …
Ga 2 O 3 films via radio frequency magnetron sputtering at different temperatures (400, 600 …