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Domain wall memory: Physics, materials, and devices
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …
Low energy consumption spintronics using multiferroic heterostructures
M Trassin - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
We review the recent progress in the field of multiferroic magnetoelectric heterostructures.
The lack of single phase multiferroic candidates exhibiting simultaneously strong and …
The lack of single phase multiferroic candidates exhibiting simultaneously strong and …
Reversible electric-field-driven magnetic domain-wall motion
Control of magnetic domain-wall motion by electric fields has recently attracted scientific
attention because of its potential for magnetic logic and memory devices. Here, we report on …
attention because of its potential for magnetic logic and memory devices. Here, we report on …
Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory
Domain-wall memory devices, in which the information is stored in nanowires, are expected
to replace hard disk drives. A problem that remains to be solved in domain-wall memory is to …
to replace hard disk drives. A problem that remains to be solved in domain-wall memory is to …
Analysis of domain wall dynamics based on skewness of magnetic Barkhausen noise for applied stress determination
Abstract Skewness of Magnetic Barkhausen Noise (MBN) signal is used as a new feature for
applied stress determination. After experimental studies, skewness presents its ability for …
applied stress determination. After experimental studies, skewness presents its ability for …
Temperature dependence of ferroelectricity and domain switching behavior in Pb (Zr0· 3Ti0. 7) O3 ferroelectric thin films
X Chen, X Qiao, L Zhang, J Zhang, Q Zhang, J He… - Ceramics …, 2019 - Elsevier
Owing to their high remanent polarization, fast switching behavior, and controllable
preparation process, Pb (Zr 0· 3 Ti 0.7) O 3 (PZT) thin films are considered to be one of the …
preparation process, Pb (Zr 0· 3 Ti 0.7) O 3 (PZT) thin films are considered to be one of the …
[HTML][HTML] Artificial multiferroic heterostructures for an electric control of magnetic properties
The control of magnetism by electric fields is an important goal for future low-power
spintronics devices. This partly explains the intensified recent interest for magnetoelectric …
spintronics devices. This partly explains the intensified recent interest for magnetoelectric …
Geometrically pinned magnetic domain wall for multi-bit per cell storage memory
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls
(DWs) by an external magnetic field or a spin-polarized current. Controlling the position of …
(DWs) by an external magnetic field or a spin-polarized current. Controlling the position of …
New feature extraction for applied stress detection on ferromagnetic material using magnetic Barkhausen noise
This paper reports on the new feature extraction for the determination of applied stress using
magnetic Barkhausen noise (MBN). Low frequency triangular waveform excitation is used to …
magnetic Barkhausen noise (MBN). Low frequency triangular waveform excitation is used to …
Domain wall oscillation in magnetic nanowire with a geometrically confined region
In conventional magnetic devices such as magnetic tunnel junctions, a steady oscillation of
a soft layer magnetization could find its application in various electronic systems. However …
a soft layer magnetization could find its application in various electronic systems. However …