Domain wall memory: Physics, materials, and devices

D Kumar, T **, R Sbiaa, M Kläui, S Bedanta, S Fukami… - Physics Reports, 2022 - Elsevier
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …

Low energy consumption spintronics using multiferroic heterostructures

M Trassin - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
We review the recent progress in the field of multiferroic magnetoelectric heterostructures.
The lack of single phase multiferroic candidates exhibiting simultaneously strong and …

Reversible electric-field-driven magnetic domain-wall motion

KJA Franke, B Van de Wiele, Y Shirahata… - Physical Review X, 2015 - APS
Control of magnetic domain-wall motion by electric fields has recently attracted scientific
attention because of its potential for magnetic logic and memory devices. Here, we report on …

Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory

M Al Bahri, B Borie, TL **, R Sbiaa, M Kläui… - Physical Review …, 2019 - APS
Domain-wall memory devices, in which the information is stored in nanowires, are expected
to replace hard disk drives. A problem that remains to be solved in domain-wall memory is to …

Analysis of domain wall dynamics based on skewness of magnetic Barkhausen noise for applied stress determination

S Ding, GY Tian, G Dobmann, P Wang - Journal of Magnetism and …, 2017 - Elsevier
Abstract Skewness of Magnetic Barkhausen Noise (MBN) signal is used as a new feature for
applied stress determination. After experimental studies, skewness presents its ability for …

Temperature dependence of ferroelectricity and domain switching behavior in Pb (Zr0· 3Ti0. 7) O3 ferroelectric thin films

X Chen, X Qiao, L Zhang, J Zhang, Q Zhang, J He… - Ceramics …, 2019 - Elsevier
Owing to their high remanent polarization, fast switching behavior, and controllable
preparation process, Pb (Zr 0· 3 Ti 0.7) O 3 (PZT) thin films are considered to be one of the …

[HTML][HTML] Artificial multiferroic heterostructures for an electric control of magnetic properties

V Garcia, M Bibes, A Barthélémy - Comptes Rendus Physique, 2015 - Elsevier
The control of magnetism by electric fields is an important goal for future low-power
spintronics devices. This partly explains the intensified recent interest for magnetoelectric …

Geometrically pinned magnetic domain wall for multi-bit per cell storage memory

MA Bahri, R Sbiaa - Scientific reports, 2016 - nature.com
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls
(DWs) by an external magnetic field or a spin-polarized current. Controlling the position of …

New feature extraction for applied stress detection on ferromagnetic material using magnetic Barkhausen noise

S Ding, GY Tian, V Moorthy, P Wang - Measurement, 2015 - Elsevier
This paper reports on the new feature extraction for the determination of applied stress using
magnetic Barkhausen noise (MBN). Low frequency triangular waveform excitation is used to …

Domain wall oscillation in magnetic nanowire with a geometrically confined region

R Sbiaa, M Al Bahri, SN Piramanayagam - Journal of Magnetism and …, 2018 - Elsevier
In conventional magnetic devices such as magnetic tunnel junctions, a steady oscillation of
a soft layer magnetization could find its application in various electronic systems. However …