First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …
electric currents in the presence of electric fields or carrier concentration gradients. These …
[HTML][HTML] Modeling techniques for quantum cascade lasers
Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …
Sub-10 nm carbon nanotube transistor
Although carbon nanotube (CNT) transistors have been promoted for years as a
replacement for silicon technology, there is limited theoretical work and no experimental …
replacement for silicon technology, there is limited theoretical work and no experimental …
[LIBRO][B] Computational Electronics: semiclassical and quantum device modeling and simulation
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
[HTML][HTML] A generic tight-binding model for monolayer, bilayer and bulk MoS2
F Zahid, L Liu, Y Zhu, J Wang, H Guo - Aip Advances, 2013 - pubs.aip.org
Molybdenum disulfide (MoS 2) is a layered semiconductor which has become very important
recently as an emerging electronic device material. Being an intrinsic semiconductor the two …
recently as an emerging electronic device material. Being an intrinsic semiconductor the two …
NEMO5: A parallel multiscale nanoelectronics modeling tool
S Steiger, M Povolotskyi, HH Park… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool
computes strain, phonon spectra, electronic band structure, charge density, charge current …
computes strain, phonon spectra, electronic band structure, charge density, charge current …
Dielectric modulated junctionless biotube FET (DM-JL-BT-FET) bio-sensor
In this manuscript, an analytical model has been demonstrated for Dielectric Modulated
Junctionless Biotube FET (DM-JL-BT-FET) as a sensor. The Junctionless Biotube FET …
Junctionless Biotube FET (DM-JL-BT-FET) as a sensor. The Junctionless Biotube FET …
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
Nanowire band-to-band tunneling field-effect transistors (TFETs) are simulated using the
Wentzel–Kramers–Brillouin (WKB) approximation and an atomistic, full-band quantum …
Wentzel–Kramers–Brillouin (WKB) approximation and an atomistic, full-band quantum …
[HTML][HTML] Linear scaling quantum transport methodologies
In recent years, predictive computational modeling has become a cornerstone for the study
of fundamental electronic, optical, and thermal properties in complex forms of condensed …
of fundamental electronic, optical, and thermal properties in complex forms of condensed …
Effects of strain on the carrier mobility in silicon nanowires
We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an
atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very …
atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very …