Low-dimensional wide-bandgap semiconductors for UV photodetectors

Z Li, T Yan, X Fang - Nature Reviews Materials, 2023‏ - nature.com
Accurate UV light detection is a crucial component in modern optoelectronic technologies.
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …

1D semiconductor nanowires for energy conversion, harvesting and storage applications

M Nehra, N Dilbaghi, G Marrazza, A Kaushik… - Nano Energy, 2020‏ - Elsevier
The accomplishment of 1D semiconductor nanowires (SN) in the field of energy has
attracted intense interest in recent years due to their advantageous properties (eg, large …

Enlightening gallium nitride-based UV photodetectors

N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2020‏ - pubs.rsc.org
This article highlights the emerging demand for gallium nitride (GaN) semiconductor
technology that offers superior optoelectronic properties making it suitable for highly efficient …

Highly responsive switchable broadband DUV‐NIR photodetector and tunable emitter enabled by uniform and vertically grown III–V nanowire on silicon substrate for …

H Yu, R Wang, MH Memon, Y Luo, S **ao, L Fu, H Sun - Small, 2024‏ - Wiley Online Library
Low‐dimensional semiconductor nanostructures, particularly in the form of nanowire
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …

Self-bias Mo–Sb–Ga multilayer photodetector encompassing ultra-broad spectral response from UV–C to IR–B

P Vashishtha, A Dash, S Walia, G Gupta - Optics & Laser Technology, 2025‏ - Elsevier
Achieving an ultra-broad spectral response in a self-bias detector is a formidable challenge
that persists in optoelectronics that necessitates innovative solutions. We propose a unique …

Constructing caesium-based lead-free perovskite photodetector enabling self-powered operation with extended spectral response

AA Hussain - ACS Applied Materials & Interfaces, 2020‏ - ACS Publications
Since the discovery of the state-of-the-art hybrid halide perovskites, their application in
optoelectronic systems has drawn considerable attention. However, the toxicity from lead …

Layered Heterostructures Based on MoS2/MoSe2 Nanosheets Deposited on GaN Substrates for Photodetector Applications

S Maity, K Sarkar, P Kumar - ACS Applied Nano Materials, 2023‏ - ACS Publications
Due to the advanced properties of layered 2D materials, their heterostructuring with
conventional 3D semiconductors is one of the promising ways to design efficient and …

Photodetecting properties of single CuO–ZnO core–shell nanowires with p–n radial heterojunction

A Costas, C Florica, N Preda, A Kuncser, I Enculescu - Scientific reports, 2020‏ - nature.com
CuO–ZnO core–shell radial heterojunction nanowire arrays were obtained by a simple route
which implies two cost-effective methods: thermal oxidation in air for preparing CuO …

Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector

Y Yang, X Wang, C Wang, Y Song, M Zhang, Z Xue… - Nano …, 2020‏ - ACS Publications
GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared
photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge …

MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

HK Sandhu, JW John, A Jakhar… - Advanced Materials …, 2022‏ - Wiley Online Library
Heterojunction photodiodes comprising of layered metal chalcogenides and wide‐bandgap
semiconductors are a promising candidate for broadband photodetection. In this work …