Low-dimensional wide-bandgap semiconductors for UV photodetectors
Z Li, T Yan, X Fang - Nature Reviews Materials, 2023 - nature.com
Accurate UV light detection is a crucial component in modern optoelectronic technologies.
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …
1D semiconductor nanowires for energy conversion, harvesting and storage applications
The accomplishment of 1D semiconductor nanowires (SN) in the field of energy has
attracted intense interest in recent years due to their advantageous properties (eg, large …
attracted intense interest in recent years due to their advantageous properties (eg, large …
Enlightening gallium nitride-based UV photodetectors
This article highlights the emerging demand for gallium nitride (GaN) semiconductor
technology that offers superior optoelectronic properties making it suitable for highly efficient …
technology that offers superior optoelectronic properties making it suitable for highly efficient …
Highly responsive switchable broadband DUV‐NIR photodetector and tunable emitter enabled by uniform and vertically grown III–V nanowire on silicon substrate for …
Low‐dimensional semiconductor nanostructures, particularly in the form of nanowire
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …
Self-bias Mo–Sb–Ga multilayer photodetector encompassing ultra-broad spectral response from UV–C to IR–B
Achieving an ultra-broad spectral response in a self-bias detector is a formidable challenge
that persists in optoelectronics that necessitates innovative solutions. We propose a unique …
that persists in optoelectronics that necessitates innovative solutions. We propose a unique …
Constructing caesium-based lead-free perovskite photodetector enabling self-powered operation with extended spectral response
AA Hussain - ACS Applied Materials & Interfaces, 2020 - ACS Publications
Since the discovery of the state-of-the-art hybrid halide perovskites, their application in
optoelectronic systems has drawn considerable attention. However, the toxicity from lead …
optoelectronic systems has drawn considerable attention. However, the toxicity from lead …
Layered Heterostructures Based on MoS2/MoSe2 Nanosheets Deposited on GaN Substrates for Photodetector Applications
Due to the advanced properties of layered 2D materials, their heterostructuring with
conventional 3D semiconductors is one of the promising ways to design efficient and …
conventional 3D semiconductors is one of the promising ways to design efficient and …
Photodetecting properties of single CuO–ZnO core–shell nanowires with p–n radial heterojunction
CuO–ZnO core–shell radial heterojunction nanowire arrays were obtained by a simple route
which implies two cost-effective methods: thermal oxidation in air for preparing CuO …
which implies two cost-effective methods: thermal oxidation in air for preparing CuO …
Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector
GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared
photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge …
photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge …
MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths
Heterojunction photodiodes comprising of layered metal chalcogenides and wide‐bandgap
semiconductors are a promising candidate for broadband photodetection. In this work …
semiconductors are a promising candidate for broadband photodetection. In this work …