Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply
voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Downscaling of metal oxide semiconductor field effect transistors (MOSFET) has resulted in
increased short channel effects (SCEs), off-leakage current and subthreshold swing. At room …

This manuscript addresses the first time implementing binary metal alloy's wide range work
function gate electrodes along with N+ Si0. 55Ge0. 45 pocket in charge plasma dielectric …

In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …

This paper presents the optimization of double-gate silicon (Si) tunnel field-effect transistors
(TFETs). It shows that, for the heterodielectric structure, the I ON current is boosted by …

The promising candidate for designing a highly sensitive biosensor is the tunneling field
effect transistor (TFET). In this work, for the first time the performance analysis of a cavity on …

This paper reports on the integration of vertical nTunnel FETs (TFETs) with SiGe hetero-
junction and analyzes the presence of trap-assisted tunneling impacting the device …

This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric
charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity. By incorporating …

In this article, a label-free biosensor with a single cavity that uses a negative capacitance
heterojunction charge-plasma-based tunnel FET (NC-HJ-CP-TFET) is presented and …