Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Emerging memories: resistive switching mechanisms and current status

DS Jeong, R Thomas, RS Katiyar… - Reports on progress …, 2012 - iopscience.iop.org
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

S Pazos, Y Shen, H Zhang, J Verdú, A Fontana… - Nature …, 2024 - nature.com
Radiofrequency switches that drive or block high-frequency electromagnetic signals—
typically, a few to tens of gigahertz—are essential components in modern communication …

Titanium dioxide thin films by atomic layer deposition: A review

JP Niemelä, G Marin, M Karppinen - Semiconductor science and …, 2017 - iopscience.iop.org
Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

Towards artificial neurons and synapses: a materials point of view

DS Jeong, I Kim, M Ziegler, H Kohlstedt - RSC advances, 2013 - pubs.rsc.org
We overview several efforts to emulate functionalities of basic building blocks, ie neurons
and synapses, of a mammal's brain by means of non-biological inorganic systems. These …

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

JH Yoon, YW Song, W Ham, JM Park, JY Kwon - APL Materials, 2023 - pubs.aip.org
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …

32× 32 crossbar array resistive memory composed of a stacked Schottky diode and unipolar resistive memory

GH Kim, JH Lee, Y Ahn, W Jeon… - Advanced Functional …, 2013 - Wiley Online Library
Various array types of 1‐diode and 1‐resistor stacked crossbar array (1D1R CA) devices
composed of a Schottky diode (SD)(Pt/TiO2/Ti/Pt) and a resistive switching (RS) memory cell …

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

H Zhang, S Yoo, S Menzel, C Funck… - … applied materials & …, 2018 - ACS Publications
Redox-type resistive random access memories based on transition-metal oxides are studied
as adjustable two-terminal devices for integrated network applications beyond von …