Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …

Rapid Single-Flux-Quantum (RSFQ) logic, based on the representation of digital bits by
single quanta of magnetic flux in superconducting loops, may combine several-hundred …

This paper describes a new high-density low-power circuit approach for implementing static
random access memory (SRAM) using low current density resonant tunneling diodes …

The invention is related to methods and apparatus for providing a resistance variable
memory element with improved data retention and Switching characteristics. According to an …

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third
Edition provides a complete course in quantum mechanics for students of semiconductor …

The electrodeposition of Ge, Si and, for the first time, of SixGe1− x from the air-and water-
stable ionic liquid 1-butyl-1-methylpyrrolidinium bis (trifluoromethylsulfonyl) amide ([Py1, 4] …

Resonant tunneling devices and circuit architectures based on monostable-bistable
transition logic elements (MOBILEs) are promising candidates for future nanoscale …

(57) ABSTRACT A charge trap** Structure for use with an n-channel metal-insulator-
Semiconductor field-effect transistor (MISFET) is disclosed. A dielectric layer is formed close …