Si/SiGe heterostructures: from material and physics to devices and circuits
DJ Paul - Semiconductor science and technology, 2004 - iopscience.iop.org
Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …
small but significant percentage of manufactured semiconductor devices. This percentage is …
[BOOK][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
[BOOK][B] Physics of quantum well devices
BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …
decades. Some of the devices have matured into commercially useful products and form part …
RSFQ technology: Physics and devices
Rapid Single-Flux-Quantum (RSFQ) logic, based on the representation of digital bits by
single quanta of magnetic flux in superconducting loops, may combine several-hundred …
single quanta of magnetic flux in superconducting loops, may combine several-hundred …
Tunneling-based SRAM
JPA van der Wagt - Proceedings of the IEEE, 1999 - ieeexplore.ieee.org
This paper describes a new high-density low-power circuit approach for implementing static
random access memory (SRAM) using low current density resonant tunneling diodes …
random access memory (SRAM) using low current density resonant tunneling diodes …
Silver-selenide/chalcogenide glass stack for resistance variable memory
KA Campbell, JT Moore - US Patent 7,151,273, 2006 - Google Patents
The invention is related to methods and apparatus for providing a resistance variable
memory element with improved data retention and Switching characteristics. According to an …
memory element with improved data retention and Switching characteristics. According to an …
[BOOK][B] Quantum mechanics: an introduction for device physicists and electrical engineers
D Ferry - 2020 - taylorfrancis.com
Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third
Edition provides a complete course in quantum mechanics for students of semiconductor …
Edition provides a complete course in quantum mechanics for students of semiconductor …
Electrodeposition of Ge, Si and Si x Ge 1− x from an air-and water-stable ionic liquid
R Al-Salman, SZ El Abedin, F Endres - Physical Chemistry Chemical …, 2008 - pubs.rsc.org
The electrodeposition of Ge, Si and, for the first time, of SixGe1− x from the air-and water-
stable ionic liquid 1-butyl-1-methylpyrrolidinium bis (trifluoromethylsulfonyl) amide ([Py1, 4] …
stable ionic liquid 1-butyl-1-methylpyrrolidinium bis (trifluoromethylsulfonyl) amide ([Py1, 4] …
Accurate quantification of Si/SiGe interface profiles via atom probe tomography
Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting
materials at sub‐nm length scales and 10 ppm chemical sensitivity. This has enabled APT to …
materials at sub‐nm length scales and 10 ppm chemical sensitivity. This has enabled APT to …
Threshold logic circuit design of parallel adders using resonant tunneling devices
C Pacha, U Auer, C Burwick… - … Transactions on Very …, 2000 - ieeexplore.ieee.org
Resonant tunneling devices and circuit architectures based on monostable-bistable
transition logic elements (MOBILEs) are promising candidates for future nanoscale …
transition logic elements (MOBILEs) are promising candidates for future nanoscale …