Si/SiGe heterostructures: from material and physics to devices and circuits

DJ Paul - Semiconductor science and technology, 2004 - iopscience.iop.org
Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

[BOOK][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

[BOOK][B] Physics of quantum well devices

BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …

RSFQ technology: Physics and devices

P Bunyk, K Likharev, D Zinoviev - International journal of high …, 2001 - World Scientific
Rapid Single-Flux-Quantum (RSFQ) logic, based on the representation of digital bits by
single quanta of magnetic flux in superconducting loops, may combine several-hundred …

Tunneling-based SRAM

JPA van der Wagt - Proceedings of the IEEE, 1999 - ieeexplore.ieee.org
This paper describes a new high-density low-power circuit approach for implementing static
random access memory (SRAM) using low current density resonant tunneling diodes …

Silver-selenide/chalcogenide glass stack for resistance variable memory

KA Campbell, JT Moore - US Patent 7,151,273, 2006 - Google Patents
The invention is related to methods and apparatus for providing a resistance variable
memory element with improved data retention and Switching characteristics. According to an …

[BOOK][B] Quantum mechanics: an introduction for device physicists and electrical engineers

D Ferry - 2020 - taylorfrancis.com
Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third
Edition provides a complete course in quantum mechanics for students of semiconductor …

Electrodeposition of Ge, Si and Si x Ge 1− x from an air-and water-stable ionic liquid

R Al-Salman, SZ El Abedin, F Endres - Physical Chemistry Chemical …, 2008 - pubs.rsc.org
The electrodeposition of Ge, Si and, for the first time, of SixGe1− x from the air-and water-
stable ionic liquid 1-butyl-1-methylpyrrolidinium bis (trifluoromethylsulfonyl) amide ([Py1, 4] …

Accurate quantification of Si/SiGe interface profiles via atom probe tomography

O Dyck, DN Leonard, LF Edge… - Advanced Materials …, 2017 - Wiley Online Library
Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting
materials at sub‐nm length scales and 10 ppm chemical sensitivity. This has enabled APT to …

Threshold logic circuit design of parallel adders using resonant tunneling devices

C Pacha, U Auer, C Burwick… - … Transactions on Very …, 2000 - ieeexplore.ieee.org
Resonant tunneling devices and circuit architectures based on monostable-bistable
transition logic elements (MOBILEs) are promising candidates for future nanoscale …