Recent progress on the electronic structure, defect, and do** properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
HW Xue, QM He, GZ Jian, SB Long, T Pang… - Nanoscale research …, 2018 - Springer
Abstract Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2
We report a vertical (001) β-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
We report the realization of field-plated vertical Ga 2 O 3 trench Schottky barrier diodes
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
Vertical β-Ga₂O₃ Power Transistors: A Review
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga's Figure-of-Merit of 0.6 GW/cm2
This letter demonstrates vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a novel edge
termination, the small-angle beveled field plate (SABFP), fabricated on thinned substrates …
termination, the small-angle beveled field plate (SABFP), fabricated on thinned substrates …