Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

L Panarella, B Kaczer, Q Smets, S Tyaginov… - npj 2D Materials and …, 2024 - nature.com
Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer
integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited …

Markov Chain Signal Generation based on Single Magnetic Tunnel Junction

X Yuan, J Jian, Z Chai, S An, Y Gao… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Markov chain (MC) is a stochastic model that describes a sequence of events where the
probability of each event depends only on the previous state. Such memoryless property …

A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs

S Vecchi, P Pavan, FM Puglisi - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
As well known, the implementation of high-κ dielectrics (eg, HfO_2) in nanoscale devices is
unavoidable to cope with the device scaling required by the market. Nevertheless, due to the …

[HTML][HTML] Analysis of random telegraph noise in resistive memories: The case of unstable filaments

N Vasileiadis, A Mavropoulis, P Loukas… - Micro and Nano …, 2023 - Elsevier
Abstract Through Random Telegraph Noise (RTN) analysis, valuable information can be
provided about the role of defect traps in fine tuning and reading of the state of a …

The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation

S Vecchi, A Padovani, P Pavan… - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
Being one of the most relevant reliability issues in electron devices, dielectric breakdown
(BD) has been in the spotlight for over 50 years and the quest for a comprehensive BD …

From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks

S Vecchi, A Padovani, P Pavan… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Despite the various well-established theories such as the thermochemical (E-model), E-
model, power law (VN-model), and 1/E-model, accurately replicate dielectric breakdown …