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Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer
integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited …
integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited …
Markov Chain Signal Generation based on Single Magnetic Tunnel Junction
X Yuan, J Jian, Z Chai, S An, Y Gao… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Markov chain (MC) is a stochastic model that describes a sequence of events where the
probability of each event depends only on the previous state. Such memoryless property …
probability of each event depends only on the previous state. Such memoryless property …
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs
As well known, the implementation of high-κ dielectrics (eg, HfO_2) in nanoscale devices is
unavoidable to cope with the device scaling required by the market. Nevertheless, due to the …
unavoidable to cope with the device scaling required by the market. Nevertheless, due to the …
[HTML][HTML] Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Abstract Through Random Telegraph Noise (RTN) analysis, valuable information can be
provided about the role of defect traps in fine tuning and reading of the state of a …
provided about the role of defect traps in fine tuning and reading of the state of a …
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation
Being one of the most relevant reliability issues in electron devices, dielectric breakdown
(BD) has been in the spotlight for over 50 years and the quest for a comprehensive BD …
(BD) has been in the spotlight for over 50 years and the quest for a comprehensive BD …
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks
Despite the various well-established theories such as the thermochemical (E-model), E-
model, power law (VN-model), and 1/E-model, accurately replicate dielectric breakdown …
model, power law (VN-model), and 1/E-model, accurately replicate dielectric breakdown …