A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics

JW Park, BH Kang, HJ Kim - Advanced Functional Materials, 2020 - Wiley Online Library
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

Oxide semiconductor thin‐film transistors: a review of recent advances

E Fortunato, P Barquinha, R Martins - Advanced materials, 2012 - Wiley Online Library
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

MG Kim, MG Kanatzidis, A Facchetti, TJ Marks - Nature materials, 2011 - nature.com
The development of large-area, low-cost electronics for flat-panel displays, sensor arrays,
and flexible circuitry depends heavily on high-throughput fabrication processes and a choice …

Recent advances of solution-processed metal oxide thin-film transistors

W Xu, H Li, JB Xu, L Wang - ACS applied materials & interfaces, 2018 - ACS Publications
Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the
most promising transistor technologies for future large-area flexible electronics. This work …

Solution processing of transparent conductors: from flask to film

RM Pasquarelli, DS Ginley, R O'Hayre - Chemical Society Reviews, 2011 - pubs.rsc.org
This critical review focuses on the solution deposition of transparent conductors with a
particular focus on transparent conducting oxide (TCO) thin-films. TCOs play a critical role in …

Sol-gel metal oxide dielectrics for all-solution-processed electronics

S Park, CH Kim, WJ Lee, S Sung, MH Yoon - Materials Science and …, 2017 - Elsevier
Metal oxide (MOx) dielectric materials are considered to be a key element for diverse thin-
film electronic systems owing to their superior electrical and mechanical properties. While …

High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …

JS Hur, MJ Kim, SH Yoon, H Choi… - … Applied Materials & …, 2022 - ACS Publications
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Solution-processable metal oxide semiconductors for thin-film transistor applications

SR Thomas, P Pattanasattayavong… - Chemical Society …, 2013 - pubs.rsc.org
Solution-processable metal oxide semiconductors for thin-film transistor applications -
Chemical Society Reviews (RSC Publishing) DOI:10.1039/C3CS35402D Royal Society of …