Maximizing spin-orbit torque generated by the spin Hall effect of Pt

L Zhu, DC Ralph, RA Buhrman - Applied Physics Reviews, 2021 - pubs.aip.org
Efficient generation of spin–orbit torques is central for the exciting field of spin-orbitronics.
Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider …

Strong Dam**‐Like Spin‐Orbit Torque and Tunable Dzyaloshinskii–Moriya Interaction Generated by Low‐Resistivity Pd1−xPtx Alloys

L Zhu, K Sobotkiewich, X Ma, X Li… - Advanced Functional …, 2019 - Wiley Online Library
Despite their great promise for providing a pathway for very efficient and fast manipulation of
magnetization, spin‐orbit torque (SOT) operations are currently energy inefficient due to a …

Interplay of voltage control of magnetic anisotropy, spin-transfer torque, and heat in the spin-orbit-torque switching of three-terminal magnetic tunnel junctions

V Krizakova, E Grimaldi, K Garello, G Sala, S Couet… - Physical Review …, 2021 - APS
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by
spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the …

Field‐Free Programmable Spin Logics via Chirality‐Reversible Spin–Orbit Torque Switching

X Wang, C Wan, W Kong, X Zhang, Y **ng… - Advanced …, 2018 - Wiley Online Library
Abstract Spin–orbit torque (SOT)‐induced magnetization switching exhibits chirality
(clockwise or counterclockwise), which offers the prospect of programmable spin‐logic …

Fast low-current spin-orbit-torque switching of magnetic tunnel junctions through atomic modifications of the free-layer interfaces

S Shi, Y Ou, SV Aradhya, DC Ralph, RA Buhrman - Physical Review Applied, 2018 - APS
Future applications of spin-orbit torque will require new mechanisms to improve the
efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling …

[HTML][HTML] Spin–orbit torque characterization in a nutshell

MH Nguyen, CF Pai - APL Materials, 2021 - pubs.aip.org
Spin current and spin torque generation through the spin–orbit interactions in solids, of bulk
or interfacial origin, is at the heart of spintronics research. The realization of spin–orbit …

Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au0.25Pt0.75

L Zhu, L Zhu, S Shi, DC Ralph… - Advanced Electronic …, 2020 - Wiley Online Library
Many key electronic technologies (eg, large‐scale computing, machine learning, and
superconducting electronics) require new memories that are at the same time fast, reliable …

Critical role of orbital hybridization in the Dzyaloshinskii-Moriya interaction of magnetic interfaces

L Zhu, L Zhu, X Ma, X Li, RA Buhrman - Communications Physics, 2022 - nature.com
Abstract Dzyaloshinskii-Moriya interaction (DMI), an interfacial spin-orbit coupling (ISOC)-
related effect, has become foundational for spintronic research and magnetic memory and …

[HTML][HTML] Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures

L Rehm, G Wolf, B Kardasz, M Pinarbasi… - Applied Physics …, 2019 - pubs.aip.org
Spin-transfer magnetic random access memory devices are of significant interest for
cryogenic computing systems where a persistent, fast, low-energy consuming, and …

[HTML][HTML] A perspective on electrical generation of spin current for magnetic random access memories

C Safranski, JZ Sun, AD Kent - Applied Physics Letters, 2022 - pubs.aip.org
Spin currents are used to write information in magnetic random access memory (MRAM)
devices by switching the magnetization direction of one of the ferromagnetic electrodes of a …