Optical microresonators with high quality (Q) factors are essential to a wide range of
integrated photonic devices. Steady efforts have been directed towards increasing …

Metal halide perovskite semiconductors hold a strong promise for enabling thin‐film laser
diodes. Perovskites distinguish themselves from other non‐epitaxial media primarily through …

Technological progress makes it possible to significantly reduce the size of semiconductor
laser emitters to microscales and sizes commensurate with the emission wavelength …

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent
optoelectronic properties. They also possess strong material nonlinearity as well as high …

We present a leaf-inspired biomimetic omnidirectional photon management scheme for
ultrathin flexible graphene silicon Schottky junction solar cell. An all-dielectric approach …

Owing to their wide direct bandgap tunability, III-nitride (III-N) compound semiconductors
have been proven instrumental in the development of blue light-emitting diodes that led to …

Gallium arsenide and related compound semiconductors lie at the heart of optoelectronics
and integrated laser technologies. Shaped at the micro-and nanoscale, they allow strong …

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-
generation optical systems. Portable metrology references and quantum networks will …

In this contribution, we demonstrate the first integrated gallium arsenide (GaAs) ring
resonator for second harmonic generation (SHG) on a GaAs-on-insulator platform. Such …

Increasing the interaction between light and mechanical resonators is an ongoing endeavor
in the field of cavity optomechanics. Optical microcavities allow for boosting the interaction …