Numerical effects in the simulation of Ginzburg–Landau models for superconductivity

WB Richardson, AL Pardhanani… - … journal for numerical …, 2004 - Wiley Online Library
Inadequate spatial mesh resolution for simulation of the time‐dependent Ginzburg–Landau
equations is shown to give rise to spurious solutions. Phenomenological studies to examine …

On the interplay between meshing and discretization in three-dimensional diffusion simulation

R Kosik, P Fleischmann, B Haindl… - … on Computer-Aided …, 2000 - ieeexplore.ieee.org
The maximum principle is the most important property of solutions to diffusion equations.
Violation of the maximum principle by the applied discretization scheme is the cause for …

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

W Filipowski - Microelectronics International, 2019 - emerald.com
Purpose The purpose of this paper was the development of a model enabling precise
determination of phosphorus concentration profile in the emitter layer of a silicon solar cell …

[KNIHA][B] A dial-an-operator approach to simulation of impurity diffusion in semiconductors

DW Yergeau - 2000 - search.proquest.com
Thermal processing is used in semiconductor manufacturing to anneal crystal damage
caused by implant and to electrically activate the impurities that were introduced to form …

Time-integration and iterative techniques for semiconductor diffusion modeling

AL Pardhanani, GF Carey - Journal of Technology Computer …, 1996 - ieeexplore.ieee.org
We investigate numerical integration, preconditioning, iterative solution and multigrid
strategies for a class of réaction-diffusion systems used for modeling nonequilibrium …

Performance of adaptive dual‐drop** ILUT preconditioners in semiconductor dopant diffusion simulation

J Zhang, AL Pardhanani… - International Journal of …, 2002 - Wiley Online Library
Preconditioning strategies based on incomplete LU factorization using thresholding with
dual drop** (ILUT) are investigated for iterative solution of sparse linear systems arising in …

[KNIHA][B] Combining experiential and theoretical knowledge in the domain of semiconductor manufacturing

JL Mohammed - 1994 - search.proquest.com
Abstract The Semiconductor Manufacturing domain is characterized by continual, rapid
change and a high degree of complexity. These characteristics reduce the effectiveness of …

A reaction-diffusion system modeling phosphorus diffusion

WB Richardson Jr - Semiconductors: Part I, 1994 - Springer
At very high concentrations phosphorus diffusion in silicon exhibits marked nonlinearities.
The hierarchy of physical models that attempt to explain this anomalous diffusion are …

Mathematical aspects of semiconductor modeling

W Richardson Jr - Nonlinear Studies, 1999 - search.ebscohost.com
Focuses on the mathematics of process modeling. Comparison between device modeling;
Contributions to mathematicians interested in nonlinear diffusion, moving boundary …

Investigation of time-integration and iterative techniques for nonequilibrium phosphorus diffusion modeling

AL Pardhanani, GF Carey - SISPAD'97. 1997 International …, 1997 - ieeexplore.ieee.org
We investigate numerical integration and iterative solution strategies for a class of reaction-
diffusion systems used for modeling nonequilibrium phosphorus diffusion in silicon. These …