Single-photon detection has emerged as a method of choice for ultra-sensitive
measurements of picosecond optical transients. In the short-wave infrared, semiconductor …

Dislocation is a common extended defect in crystalline silicon solar cells, which affects the
recombination characteristics of solar cells by forming deep‐level defect states in the silicon …

It is widely known that photoluminescence (PL) and infrared (IR) spectroscopies are among
the experimental tools extensively used in the last decades for the study of impurities and …

We have demonstrated the presence of a dislocation-related component and a component
due to oxygen precipitates in a broad deep-level photoluminescence (PL) band in …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

The aim of this paper is to identify the origin of a deep-level emission band with a peak at
about 0.8 eV observed in photoluminescence from defective areas in multicrystalline Si …

This paper presents a comparative analysis of the structure and photoluminescence (PL) of
Si containing dislocations introduced by thermal shock or ion implantation. To study the …

Micrometer-scale deep-level spectral photoluminescence (PL) from dislocations is
investigated around the subgrain boundaries in multicrystalline silicon. The spatial …

In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as
striations) can cause degradation up to 1% absolute or even more in homojunction industrial …

We analysed the electronic and optical properties of oxygen-related striations in n-type
Czochralski silicon wafers that underwent polysilicon contact process using deep level …