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Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
This paper examines the performance degradation of a MOS device fabricated on silicon-on-
insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is …
insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is …
A review of silicon carbide CMOS technology for harsh environments
A comprehensive overview of the advancements, challenges, and prospects of silicon
carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented …
carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented …
PSP: An advanced surface-potential-based MOSFET model for circuit simulation
This paper describes the latest and most advanced surface-potential-based model jointly
developed by The Pennsylvania State University and Philips. Specific topics include model …
developed by The Pennsylvania State University and Philips. Specific topics include model …
A simple semiempirical short-channel MOSFET current–voltage model continuous across all regions of operation and employing only physical parameters
A simple semiempirical model ID (V GS, V DS) for short-channel MOSFETs applicable in all
regions of device operation is presented. The model is based on the so-called ldquotop-of …
regions of device operation is presented. The model is based on the so-called ldquotop-of …
[كتاب][B] The design of modern microwave oscillators for wireless applications: theory and optimization
UL Rohde, AK Poddar, G Böck - 2005 - books.google.com
Delivering the best possible solution for phase noise and output power efficiency in
oscillators This complete and thorough analysis of microwave oscillators investigates all …
oscillators This complete and thorough analysis of microwave oscillators investigates all …
MOS transistor modeling for RF IC design
This paper presents the basis of the modeling of the MOS transistor for circuit simulation at
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …
[كتاب][B] MOSFET modeling for circuit analysis and design
C Galup-Montoro - 2007 - books.google.com
This is the first book dedicated to the next generation of MOSFET models. Addressed to
circuit designers with an in-depth treatment that appeals to device specialists, the book …
circuit designers with an in-depth treatment that appeals to device specialists, the book …
An analytic potential model for symmetric and asymmetric DG MOSFETs
This paper presents an analytic potential model for long-channel symmetric and asymmetric
double-gate (DG) MOSFETs. The model is derived rigorously from the exact solution to …
double-gate (DG) MOSFETs. The model is derived rigorously from the exact solution to …
Artificial neural network design for compact modeling of generic transistors
A methodology to develop artificial neural network (ANN) models to quickly incorporate the
characteristics of emerging devices for circuit simulation is described in this work. To …
characteristics of emerging devices for circuit simulation is described in this work. To …
MOSFET modeling for RF IC design
High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC)
design is discussed. Modeling of the intrinsic device and the extrinsic components is …
design is discussed. Modeling of the intrinsic device and the extrinsic components is …