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Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography

D De Vocht, L Armbruster, A Millan-Mejia… - … on Integrated Optics, 2024 - Springer
We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner
lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height …
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Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography

Y Jiao, E Bente - The 25th European Conference on Integrated Optics … - books.google.com
We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner
lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height …
Αποθήκευση Παράθεση Σχετικά άρθρα