Strategic review of gas sensing enhancement ways of 2D tungsten disulfide/selenide based chemiresistive sensors: Decoration and composite
Gas sensors that exhibit high sensitivity and possess astonishingly low detection limits are
appealing for a wide range of practical applications, like real-time environmental monitoring …
appealing for a wide range of practical applications, like real-time environmental monitoring …
Atomic Layer Deposition Films for Resistive Random‐Access Memories
Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
[HTML][HTML] Resistive switching behavior of TiO2/(PVP: MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices
Resistive switching (RS) behavior of bilayer of poly (4-vinylphenol)(PVP): molybdenum
disulfide (MoS 2) nanocomposite (NC) and TiO 2 in resistive random-access memory …
disulfide (MoS 2) nanocomposite (NC) and TiO 2 in resistive random-access memory …
Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe2 Active Layer
In this work, a unique composite of a polymer and two-dimensional material (PVP: MoSe2) is
demonstrated as a potential resistive switching layer for flexible resistive random-access …
demonstrated as a potential resistive switching layer for flexible resistive random-access …
Nonvolatile and volatile resistive switching characteristics in MoS2 thin film for RRAM application
X Lei, X Zhu, H Wang, Y Dai, H Zhang, C Zhai… - Journal of Alloys and …, 2023 - Elsevier
Resistive random access memory (RRAM) is one of strong candidates for future memory
technology. The volatile and nonvolatile properties of devices are important foundations for …
technology. The volatile and nonvolatile properties of devices are important foundations for …
A solution-processable benzothiazole-substituted formazanate zinc (ii) complex designed for a robust resistive memory device
A novel mononuclear bis (formazanate) zinc complex (1) based on a redox-active 1-
(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been …
(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been …
Design and synthesis of a solution-processed redox-active bis (formazanate) zinc complex for resistive switching applications
In this paper, we report the synthesis and characterization of a mononuclear zinc complex
(1) containing a redox-active bis (4-antipyrinyl) derivative of the 3-cyanoformazanate ligand …
(1) containing a redox-active bis (4-antipyrinyl) derivative of the 3-cyanoformazanate ligand …
Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence
Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐
efficient computing analogous to the human brain and visual system. Inspired by the human …
efficient computing analogous to the human brain and visual system. Inspired by the human …
Two-dimensional van der Waals stack heterostructures for flexible thermoelectrics
The incorporation of disparate materials into heterostructures has arisen as a formidable
technique for modulating interfaces and electronic configurations. The introduction of two …
technique for modulating interfaces and electronic configurations. The introduction of two …
Investigation of solution-processed tungsten disulfide as switching layer in flexible resistive memory devices for performance and stability
Solution-processed tungsten disulfide (WS 2) is demonstrated as a promising resistive
switching layer for flexible resistive random access memory (RRAM) devices. For this study …
switching layer for flexible resistive random access memory (RRAM) devices. For this study …