A comprehensive review of ZnO materials and devices

Ü Özgür, YI Alivov, C Liu, A Teke… - Journal of applied …, 2005‏ - pubs.aip.org
The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

Defects in zno

MD McCluskey, SJ Jokela - Journal of Applied Physics, 2009‏ - pubs.aip.org
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …

RETRACTED: Recent progress in processing and properties of ZnO

SJ Pearton, DP Norton, K Ip, YW Heo… - Progress in materials …, 2005‏ - Elsevier
ZnO is attracting considerable attention for its possible application to UV light emitters, spin
functional devices, gas sensors, transparent electronics and surface acoustic wave devices …

Resistivity of polycrystalline zinc oxide films: current status and physical limit

K Ellmer - Journal of Physics D: Applied Physics, 2001‏ - iopscience.iop.org
Heavily doped zinc oxide films are used as transparent and conductive electrodes,
especially in thin film solar cells. Despite decades of research on zinc oxide it is not yet clear …

[HTML][HTML] ZnO: growth, do** & processing

DP Norton, YW Heo, MP Ivill, K Ip, SJ Pearton… - Materials today, 2004‏ - Elsevier
A review is given here of recent results in develo** improved control of growth, do**,
and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light …

Recent advances in processing of ZnO

SJ Pearton, DP Norton, K Ip, YW Heo… - Journal of Vacuum …, 2004‏ - pubs.aip.org
A review is given of recent results in develo** improved fabrication processes for ZnO
devices with the possible application to UV light emitters, spin functional devices, gas …

Recent progress in processing and properties of ZnO

SJ Pearton, DP Norton, K Ip, YW Heo… - Superlattices and …, 2003‏ - Elsevier
ZnO is attracting considerable attention for its possible application to UV light emitters, spin
functional devices, gas sensors, transparent electronics and surface acoustic wave devices …

Realization of -type ZnO thin films via phosphorus do** and thermal activation of the dopant

KK Kim, HS Kim, DK Hwang, JH Lim, SJ Park - Applied Physics Letters, 2003‏ - pubs.aip.org
A p-type ZnO was prepared on a sapphire substrate using P 2 O 5 as a phosphorus dopant.
As-grown n-type ZnO films doped with phosphorus showed electron concentrations of 10 16 …

Silent Raman modes in zinc oxide and related nitrides

FJ Manjón, B Mari, J Serrano, AH Romero - Journal of applied physics, 2005‏ - pubs.aip.org
Anomalous Raman modes have been reported in several recent papers dealing with doped-
and undoped-ZnO layers grown by different methods. Most of these anomalous Raman …

Compensation mechanism for N acceptors in ZnO

EC Lee, YS Kim, YG **, KJ Chang - Physical Review B, 2001‏ - APS
We present a mechanism for the compensation of N acceptors in ZnO through real-space
multigrid electronic structure calculations within the local-density-functional approximation …