Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …

We summarize the properties of eigenvalues and eigenfunctions of the Laplace operator in
bounded Euclidean domains with Dirichlet, Neumann, or Robin boundary condition. We …

This paper introduces a novel method to account for quantum disorder effects into the
classical drift-diffusion model of semiconductor transport through the localization landscape …

We prove the existence of extensive many-body Hamiltonians with few-body interactions
and a many-body mobility edge: all eigenstates below a nonzero energy density are …

The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …

Band gap tunability of lead mixed halide perovskites makes them promising candidates for
various applications in optoelectronics. Here we use the localization landscape theory to …

We present here a model of carrier distribution and transport in semiconductor alloys
accounting for quantum localization effects in disordered materials. This model is based on …

This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

The amplitude of localized quantum states in random or disordered media may exhibit long-
range exponential decay. We present here a theory that unveils the existence of an effective …

Urbach tails in semiconductors are often associated to effects of compositional disorder. The
Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased …