Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of
visible and infrared photodetectors are needed for commercial applications. n-Type ZnO …

A variable speed photovoltaic direct-current (DC) refrigerator (VSPVDR) system is proposed
in this paper. In the VSPVDR system, the photovoltaic (PV) cells are directly connected to the …

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-
assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry …

We investigate the nature of excitons bound to I 1 basal-plane stacking faults [(I 1, X)] in GaN
nanowire ensembles by continuous-wave and time-resolved photoluminescence …

Aggregation-induced emission (AIE) is a unique photophysical process, and its emergence
brings a revolutionary change in luminescence. However, AIE-based research has been …

The third-generation semiconductors are the cornerstone of the power semiconductor leap
forward and have attracted much attention because of their excellent properties and wide …

This paper reports the combined plasmon coupled-surface energy transfer (PC-SET) and a
distance-dependent model constructed by gold nanoparticles (GNPs) over zinc oxide …

We investigate the origin of the fast recombination dynamics of bound and free excitons in
GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy …

Population distributions and transition fluxes of the A exciton in bulk GaN are theoretically
analyzed using rate equations of states of the principal quantum number n up to 5 and the …

Evidences are shown that excitons at stacking faults (SFs) in GaN nanowires (NWs) behave
like 2-dimentional particles in quantum wells. The SFs were studied in samples of …