N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Progress in efficient do** of high aluminum-containing group III-nitrides
YH Liang, E Towe - Applied Physics Reviews, 2018 - pubs.aip.org
The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …
that are critical to a number of technologies in modern life—the other being silicon. Light …
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity
S Fernández-Garrido, X Kong, T Gotschke… - Nano …, 2012 - ACS Publications
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires
in plasma-assisted molecular beam epitaxy and whether their formation has to be induced …
in plasma-assisted molecular beam epitaxy and whether their formation has to be induced …
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux
during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth …
during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth …
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
A Bengoechea-Encabo, F Barbagini… - Journal of Crystal …, 2011 - Elsevier
The influence of the substrate temperature, III/V flux ratio, and mask geometry on the
selective area growth of GaN nanocolumns is investigated. For a given set of growth …
selective area growth of GaN nanocolumns is investigated. For a given set of growth …
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under
active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The …
active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The …
Molecular beam epitaxy for high-performance Ga-face GaN electron devices
Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-
based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT …
based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT …
Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam …
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN
films on a metal–organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by …
films on a metal–organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by …
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
We present combined in situ thermal cleaning and intentional do** strategies near the
substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility …
substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility …