Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier
This paper examines the performance of a Gate-Engineered Gate-All-Around Charge
Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the …
Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the …
Design and optimization of vertical nanowire tunnel FET with electrostatic do**
While dealing with the nanoscale regime, most devices make sacrifices in terms of
performance. So to meet the performance requirements, Electrostatic doped Vertical …
performance. So to meet the performance requirements, Electrostatic doped Vertical …
Device and circuit level performance assessments of gate engineered Ge/GaAs heterojunction do** less TFET
Recently, the do**‐less tunnel FET has gained popularity due to its lower process
complexity than conventional TFETs with heavily doped source and drain regions. In this …
complexity than conventional TFETs with heavily doped source and drain regions. In this …
Design and Investigation of SRAM using Charge Plasma Do**less Nanowire FET
P Goel, MG Agrawal, S Anand… - … World Conference on …, 2023 - ieeexplore.ieee.org
A static random-access memory (SRAM) using Charge Plasma Do**less Nanowire Field
Effect Transistor (CP-DLNWFET) with radius 5 nm and channel length of 20nm is proposed …
Effect Transistor (CP-DLNWFET) with radius 5 nm and channel length of 20nm is proposed …
Vertical-Architecture based Nanowire TFET using Gate Engineering Technique-Design and Analysis
A Bhardwaj, P Kumar, B Raj… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
This paper is focusing on the designing and boosting of performance by using gate
engineering technique. In this paper a Gate Stacked (GS)-Double Metal Gate (DMG)-Vertical …
engineering technique. In this paper a Gate Stacked (GS)-Double Metal Gate (DMG)-Vertical …