Variation-immune resistive non-volatile memory using self-organized sub-bank circuit designs
N Khoshavi, S Salehi… - 2017 18th International …, 2017 - ieeexplore.ieee.org
While technology scaling enables increased density for memory cells, the intrinsic high
leakage power of CMOS technology and the demand for reduced energy consumption …
leakage power of CMOS technology and the demand for reduced energy consumption …
A full-sensing-margin dual-reference sensing scheme for deeply-scaled STT-RAM
Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one
of the most promising non-volatile memory candidates for the next-generation computer …
of the most promising non-volatile memory candidates for the next-generation computer …
Reliability analysis of spin transfer torque based look up tables under process variations and NBTI aging
Spin transfer torque (STT) switching realized using a magnetic tunnel junction (MTJ) device
has shown great potential for low power and non-volatile storage. A prime application of …
has shown great potential for low power and non-volatile storage. A prime application of …
Energy-Aware Data Movement In Non-Volatile Memory Hierarchies
NK Najafabadi - 2017 - stars.library.ucf.edu
While technology scaling enables increased density for memory cells, the intrinsic high
leakage power of conventional CMOS technology and the demand for reduced energy …
leakage power of conventional CMOS technology and the demand for reduced energy …