Graphene nanoribbon (GNR) devices are being extensively investigated as possible
candidates for replacing silicon-channel devices in the next-generation integrated circuits …

This paper presents an accurate analytical compact model for Schottky-barrier-type
graphene nanoribbon field-effect transistors (SB-GNRFETs). This is a physics-based …

In this paper, we present a highly accurate closed-form compact model for Schottky-Barrier-
type Graphene Nano-Ribbon Field-Effect Transistors (SB-GNRFETs). This is a physics …

The key enabling factor for Spin Wave (SW) technology utilization for building ultra low
power circuits is the ability to energy efficiently cascade SW basic computation blocks. SW …

The graphene nano-ribbon field effect transistor (GNRFET) is an emerging technology that
received much attention in recent years. Recent work on GNRFET circuit simulations has …

In this paper, some important circuit parameters of a monolayer armchair graphene
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …

This textbook comprehensively covers on-chip interconnect dimension and application of
carbon nanomaterials for modeling VLSI interconnect and buffer circuits. It provides analysis …

The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale
circuits design is challenging because there are several adjustable parameters that need to …

Designing and implementing artificial neuromorphic systems, which can provide
biocompatible interfacing, or the human brain akin ability to efficiently process information, is …

By their very nature Spin Waves (SWs) enable the realization of energy efficient circuits, as
they propagate and interfere within waveguides without consuming noticeable energy …