Promises and prospects of two-dimensional transistors
Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …
atomically thin channels that could facilitate continued transistor scaling. However, despite …
The future of two-dimensional semiconductors beyond Moore's law
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
Ultralow contact resistance between semimetal and monolayer semiconductors
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire
Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …
Approaching the quantum limit in two-dimensional semiconductor contacts
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
Two-dimensional devices and integration towards the silicon lines
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
Ballistic two-dimensional InSe transistors
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
P-type electrical contacts for 2D transition-metal dichalcogenides
Digital logic circuits are based on complementary pairs of n-and p-type field effect transistors
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …
(FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) …
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture
Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides,
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
C Tan, M Yu, J Tang, X Gao, Y Yin, Y Zhang, J Wang… - Nature, 2023 - nature.com
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …