ABSTRACT A magnetoresistive random-access memory (MRAM) is disclosed. MRAM
device has a magnetic tunnel junction stack having a significantly improved performance of …

Scholer LLP (57) ABSTRACT A magnetoresistive random-access memory (MRAM) device is
disclosed. The device described herein has a spin current injection cap** layer between …

(57) ABSTRACT A magnetoresistive random-access memory (MRAM) device is disclosed.
The device described herein has a thermal stability enhancement layer over the free layer of …

(57) ABSTRACT A magnetoresistive random-access memory (MRAM) is disclosed. MRAM
device has a magnetic tunnel junction stack having a significantly improved performance of …

(57) ABSTRACT A method for manufacturing MTJ pillars for a MTJ memory device. The
method includes depositing multiple MTJ layers on a Substrate, depositing a hard mask on …

(56) References Cited 7352021 B2 4/2008 Bae et al. 7376006 B2 5/2008 Bednorz et al. US
PATENT D ()(" UMENTS 7378699 B2 5/2008 Chan et al. 7449345 B2 11/2008 Horng et al …

(51) Int. Cl. A method for manufacturing MTJ pillars for a MTJ memory HOIL 29/82(2006.01)
device. The method includes depositing multiple MTJ layers HOIL 43/12(2006.01) on a …

(60) Continuation-in-part of application No. 13/041,104,(Continued) filed on Mar. 4, 2011,
now Pat. No. 8,363,465, which is a division of application No. 12/490,588, filed on Jun …

(56) References Cited 7,352,021 B2 4/2008 Bae et al. 7,449,345 B2 11/2008 Horng et al.
US PATENT DOCUMENTS 7,476,919 B2 1/2009 Hong et al. 7,573,737 B2 8/2009 Kent et …

Described embodiments can be used in semiconductor manufacturing and employ materials
with high and low polish rates to help determine a precise polish end point that is consistent …