Phase change memory cell and manufacturing method
HL Lung, R Liu, SH Chen, YC Chen - US Patent 7,688,619, 2010 - Google Patents
4,719,594 4,769,339 4,876,220 4.959, 812 5,106,775 5,166,096 5,166,758 5,177.567
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
Phase change memory device and manufacturing method
HL Lung, SH Chen - US Patent 7,786,460, 2010 - Google Patents
A phase change memory device comprises a photolithographically formed phase change
memory cell having first and second electrodes and a phase change element positioned …
memory cell having first and second electrodes and a phase change element positioned …
Semiconductor device
S Kaeriyama, M Mizuno - US Patent 7,425,720, 2008 - Google Patents
A programmable semiconductor device has a switch element in an interconnection layer,
wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection …
wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection …
Integrated circuit device and fabrication using metal-doped chalcogenide materials
J Li, A McTeer - US Patent 6,800,504, 2004 - Google Patents
Methods of forming metal-doped chalcogenide layers and devices containing such doped
chalcogenide layers include using a plasma to induce diffusion of metal into a chalco genide …
chalcogenide layers include using a plasma to induce diffusion of metal into a chalco genide …
Electrically actuated switch
RS Williams - US Patent 8,766,224, 2014 - Google Patents
An electrically actuated switch comprises a first electrode, a second electrode, and an active
region disposed therebetween. The active region comprises at least one primary active …
region disposed therebetween. The active region comprises at least one primary active …
Memory using mixed valence conductive oxides
D Rinerson, C Chevallier, W Kinney… - US Patent App. 11 …, 2006 - Google Patents
A memory using a mixed valence conductive oxides. The memory includes a mixed valence
conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic …
conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic …
Integrated circuit 3D phase change memory array and manufacturing method
HL Lung - US Patent 8,173,987, 2012 - Google Patents
US PATENT DOCUMENTS 3,271,591 A 9/1966 Ovshinsky 3,530,441 A 9/1970 Ovshinsky
4,452,592 A 6, 1984 Tsai 4,599,705 A 7/1986 Holmberg et al. 4,719,594 A 1/1988 Young et …
4,452,592 A 6, 1984 Tsai 4,599,705 A 7/1986 Holmberg et al. 4,719,594 A 1/1988 Young et …
PCRAM memory cell and method of making same
ST Harshfield, DQ Wright - US Patent 7,102,150, 2006 - Google Patents
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …
Programmable structure, an array including the structure, and methods of forming the same
MN Kozicki - US Patent 6,927,411, 2005 - Google Patents
(57) ABSTRACT A microelectronic programmable Structure Suitable for Stor ing information,
and array including the Structure and meth ods of forming and programming the structure …
and array including the Structure and meth ods of forming and programming the structure …
Front to back resistive random access memory cells
J Greene, FW Hawley, J McCollum - US Patent 8,415,650, 2013 - Google Patents
A resistive random access memory cell is formed on a semiconductor substrate. First and
second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is …
second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is …