The main intent of this paper is to present an exhaustive description of the most relevant
mathematical models for the electromechanical properties of heterostructure quantum dots …

We present expressions for the elastic and first-order piezoelectric tensor in (111)-oriented III-
V zinc-blende semiconductors. Moreover, an equation for the second-order piezoelectric …

A comparison between k→· p→ and tight-binding methods for the analysis of InAs/GaAs
quantum dot bandstructures is presented based on a fully coupled computation of …

A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs)
exploits InGaN-quantum-dot-based active regions. However, the role of local composition …

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well
(MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical …

The strain effect on graphene‐encapsulated Au nanoparticles is investigated. A finite‐
element calculation is performed to simulate the strain distribution and morphology of the …

The impact of electromechanical coupling on optical properties of light-emitting diodes
(LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical …

Coupling atomistic and continuous media models for electronic device simulation |
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We present a detailed theoretical analysis of the electrostatic built-in fields and the electronic
structures of polar and semipolar dot-in-a-well systems. Our theory is based on a symmetry …

The influence of compressive strain on the deformation of GaAs nanoparticles embedded in
different host matrices is investigated. The simulation results indicate that it can be easier to …