[HTML][HTML] Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison
This paper investigates the commutation transients of MOSFET and GaN FET devices in
motor drive applications during hard-switching and soft-switching commutations at dead …
motor drive applications during hard-switching and soft-switching commutations at dead …
[HTML][HTML] Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
Various high-k dielectrics have been proposed for AlGaN/GaN MOSHEMTs for gate leakage
and drain-current collapse suppression. Hafnium oxide (HfO2) is particularly interesting …
and drain-current collapse suppression. Hafnium oxide (HfO2) is particularly interesting …
Rf gan-hemt technology evaluation framework based on drain current transient measurements
A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related
parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and …
parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and …
[HTML][HTML] Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si (-IGBT and-Diode), SiC (-MOSFETs and-JFET) and GaN (-HEMTs) Devices
D Nehmer, T Ringelmann, MM Bakran - Energies, 2024 - mdpi.com
This paper will evaluate the surge current robustness of different devices in relation to the
active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC …
active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC …
An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices
J Lei, Y Liu, Z Yang, Y Chen, D Chen, L Xu, J Yu - Micromachines, 2023 - mdpi.com
In this work, we present an analytical model of dynamic power losses for enhancement-
mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build …
mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build …