A new approach to designing high-sensitivity low-dimensional photodetectors
Photodetectors fabricated from low-dimensional materials such as quantum dots, nanowires,
and two-dimensional materials show tremendous promise based on reports of very high …
and two-dimensional materials show tremendous promise based on reports of very high …
From Material to Cameras: Low‐Dimensional Photodetector Arrays on CMOS
The last two decades have witnessed a dramatic increase in research on low‐dimensional
material with exceptional optoelectronic properties. While low‐dimensional materials offer …
material with exceptional optoelectronic properties. While low‐dimensional materials offer …
Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity
Infrared detection and imaging are key enabling technologies for a vast number of
applications, ranging from communication, to medicine and astronomy, and have recently …
applications, ranging from communication, to medicine and astronomy, and have recently …
[HTML][HTML] Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
A two terminal extended short wavelength infrared heterojunction phototransistor based on
type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With …
type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With …
[HTML][HTML] Highly sensitive SWIR detector array based on nanoscale phototransistors integrated on CMOS readout
Ultra-sensitive and fast infrared imaging has become increasingly important in applications
that require high frame rates at low light levels, such as exoplanet imaging. The sensitivity of …
that require high frame rates at low light levels, such as exoplanet imaging. The sensitivity of …
Surface passivation and aging of InGaAs/InP heterojunction phototransistors
We report the effect of different surface treatment and passivation techniques on the stability
of InGaAs/InP heterojunction phototransistors (HPTs). An In 0.53 Ga 0.47 As surface …
of InGaAs/InP heterojunction phototransistors (HPTs). An In 0.53 Ga 0.47 As surface …
Substrate-independent broad-band immersion microlens arrays with a high coupling efficiency for infrared focal plane arrays
CM Kang, S Bianconi, T Hamilton… - ACS Applied …, 2022 - ACS Publications
The sensitivity of infrared (IR) focal plane arrays (FPAs) is often limited by a low pixel fill
factor. Solid immersion microlens arrays address this problem by focusing the light reaching …
factor. Solid immersion microlens arrays address this problem by focusing the light reaching …
Energy-efficient carbon nanotube field-effect phototransistors: Quantum simulation, device physics, and photosensitivity analysis
K Tamersit - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
In this paper, new nanoscale phototransistors based on carbon nanotube (CNT) are
proposed and assessed using a quantum simulation-based computational methodology …
proposed and assessed using a quantum simulation-based computational methodology …
High speed antimony-based superlattice photodetectors transferred on sapphire
We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR
photodetector from native GaSb substrates to low-loss sapphire substrate in order to …
photodetector from native GaSb substrates to low-loss sapphire substrate in order to …
InGaAs based heterojunction phototransistors: Viable solution for high-speed and low-noise short wave infrared imaging
Highly sensitive and fast imaging at short-wavelength infrared (SWIR) is one of the key
enabling technologies for the direct-imaging of habitable exoplanets. SWIR imaging systems …
enabling technologies for the direct-imaging of habitable exoplanets. SWIR imaging systems …