Ferroelectric thin films: Review of materials, properties, and applications

N Setter, D Damjanovic, L Eng, G Fox… - Journal of applied …, 2006 - pubs.aip.org
An overview of the state of art in ferroelectric thin films is presented. First, we review
applications: microsystems' applications, applications in high frequency electronics, and …

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Broadband visual adaption and image recognition in a monolithic neuromorphic machine vision system

Y Cai, F Wang, X Wang, S Li, Y Wang… - Advanced Functional …, 2023 - Wiley Online Library
Bio‐inspired machine visions have caused wide attentions due to the higher time/power
efficiencies over the conventional architectures. Although bio‐mimic photo‐sensors and …

[HTML][HTML] Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films

W Zhu, J Hayden, F He, JI Yang, P Tipsawat… - Applied Physics …, 2021 - pubs.aip.org
This manuscript reports the temperature dependence of ferroelectric switching in Al 0.84 Sc
0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all …

[PDF][PDF] Hysteresis in piezoelectric and ferroelectric materials

D Damjanovic - Science of hysteresis, 2006 - infoscience.epfl.ch
Piezoelectric and ferroelectric materials are widely used in many areas of technology and
science. The sensors based on the piezoelectric effect transform mechanical signals into …

Domain switching kinetics in disordered ferroelectric thin films

JY Jo, HS Han, JG Yoon, TK Song, SH Kim, TW Noh - Physical review letters, 2007 - APS
We investigated domain kinetics by measuring the polarization switching behaviors of (111)-
preferred polycrystalline Pb (Zr, Ti) O 3 films, which are widely used in ferroelectric …

Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model

K Yazawa, J Hayden, JP Maria, W Zhu… - Materials …, 2023 - pubs.rsc.org
Ferroelectric polarization switching is one common example of a process that occurs via
nucleation and growth, and understanding switching kinetics is crucial for applications such …

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

D Zhou, Y Guan, MM Vopson, J Xu, H Liang, F Cao… - Acta Materialia, 2015 - Elsevier
HfO 2-based binary lead-free ferroelectrics show promising properties for non-volatile
memory applications, providing that their polarization reversal behavior is fully understood …

Polarization switching kinetics of epitaxial Pb (Zr0. 4Ti0. 6) O3 thin films

YW So, DJ Kim, TW Noh, JG Yoon, TK Song - Applied Physics Letters, 2005 - pubs.aip.org
The polarization switching kinetics of epitaxial Pb (Zr 0.4 Ti 0.6) O 3 thin films were
investigated by measuring write pulse-width dependences of switched polarization Δ P (t) …

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

J Gao, YC Chien, L Li, HK Lee, S Samanta, B Varghese… - Small, 2024 - Wiley Online Library
Abstract Aluminum Scandium Nitride (Al1− xScxN) has received attention for its exceptional
ferroelectric properties, whereas the fundamental mechanism determining its dynamic …