Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging do** technologies enabled by low temperature, non-equilibrium …

High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …

High-temperature annealing (HTA) has been recognized as an available method to
annihilate the domain boundaries and improve the crystalline quality of AlN films. Here …

Recovery of epitaxial AlN films on sapphire at high temperatures is now an established
process to produce pseudo-substrates with high crystalline perfection, which can be used to …

In this work, we compare the defect structure in unintentionally doped and Si-doped AlN
layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed …

Herein, a novel process of substrate pretreatment and high temperature annealing for
elementary source vapor phase epitaxy (EVPE) is shown to be capable of optimizing the …

Structural and optical properties of AlN films grown on c-sapphire by metalorganic chemical
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …

The optical centers in AlN can frequently exist in various charge states and can be
accompanied by many coexisting defect species, creating a complex environment where …

AlN is a piezoelectric material used in telecommunication applications due to its high
surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is …

The structural recovery of AlN grown by reactive sputtering on a sapphire substrate during
high-temperature annealing is studied by means of transmission electron microscopy and …